m29dw256g Numonyx, m29dw256g Datasheet - Page 77

• Manufacturer Part Number: m29dw256g
• Description: 256-mbit X16, Multiple Bank, Page, Dual Boot 3 V Supply Flash Memory
• Manufacturer: Numonyx

Table 39.
1. The values given in the above table are valid for both packages.
Address
4Ah
4Bh
4Ch
4Dh
4Eh
5Ah
5Bh
x16
40h
41h
42h
43h
44h
45h
46h
47h
48h
49h
4Fh
50h
51h
52h
57h
58h
59h
Primary algorithm-specific extended query table
0050h
0052h
0049h
0031h
0033h
0010h
0002h
0001h
0000h
0008h
0073h
0000h
0002h
0085h
0095h
0001h
0001h
0001h
0008h
0004h
0013h
0030h
0030h
0013h
Data
Primary algorithm extended query table unique ASCII string “PRI”
Major version number, ASCII
Minor version number, ASCII
Address sensitive unlock (bits 1 to 0)
00 = required, 01= not required
Silicon revision number (bits 7 to 2)
Erase suspend
00 = not supported, 01 = read only, 02 = read and write
Block protection
00 = not supported, x = number of blocks per group
Temporary block unprotect
00 = not supported, 01 = supported
Block protect /unprotect
08 = M29DW256G
Simultaneous operations: x= block number (excluding bank A)
Burst mode, 00 = not supported, 01 = supported
Page mode, 00 = not supported, 02 = 8-word page
V
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
V
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 mV
01 = Dual Boot
Program suspend, 00 = not supported, 01 = supported
Unlock bypass: 00 = not supported, 01 = supported
Extended memory block size (customer lockable), 2
Bank organization, 00 = data at 4Ah is 0, x= bank number
Bank A information, x = number of blocks in bank A
Bank B information, x = number of blocks in bank B
Bank C information, x = number of blocks in bank C
Bank D information, x = number of blocks in bank D
PPH
PPH
supply minimum program/erase voltage
supply maximum program/erase voltage
Description
(1)
n
bytes
Supported
Supported
supported
supported
Dual Boot
65 nm
Value
8.5 V
9.5 V
Yes
115
256
Not
Not
‘P’
‘R’
02
19
48
48
19
‘1’
‘3’
‘I’
2
1
8
4
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