mt28f008b3vg-9-tet Micron Semiconductor Products, mt28f008b3vg-9-tet Datasheet - Page 6
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mt28f008b3vg-9-tet
Manufacturer Part Number
mt28f008b3vg-9-tet
Description
8mb Smart 3 Boot Block Flash Memory
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT28F008B3VG-9-TET.pdf
(30 pages)
Table 3:
NOTE:
09005aef81136a91
Q10.fm - Rev. E 6/04 EN
Standby
RESET
READ
READ
Output Disable
WRITE/ERASE (EXCEPT BOOT BLOCK)
ERASE SETUP
ERASE CONFIRM
WRITE SETUP
WRITE
READ ARRAY
WRITE/ERASE (BOOT BLOCK)
ERASE SETUP
ERASE CONFIRM
ERASE CONFIRM
WRITE SETUP
WRITE
WRITE
READ ARRAY
DEVICE IDENTIFICATION
Manufacturer Compatibility
Device (top boot)
Device (bottom boot)
1. L = V
2. V
3. Operation must be preceded by ERASE SETUP command.
4. Operation must be preceded by WRITE SETUP command.
5. The READ ARRAY command must be issued before reading the array after writing or erasing.
6. When WP# = V
7. V
8. V
9. A1–A8, A10–A19 = V
ID
PPH
HH
4
4
4, 6
= 12V; may also be read by issuing the IDENTIFY DEVICE command.
= 12V.
IL
= V
, H = V
PPH
5
5
FUNCTION
1 = 3.3V or V
Truth Table (MT28F008B3)
IH
3
3
3, 6
, X = V
IH
, RP# may be at V
IL
IL
.
or V
8, 9
PPH
IH
2 = 5V.
2, 7
.
IH
or V
2
RP#
V
V
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
HH
HH
HH
.
CE#
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
1
SMART 3 BOOT BLOCK FLASH MEMORY
OE#
X
X
H
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
L
6
WE#
X
X
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WP#
X
X
X
X
X
X
X
X
X
X
X
H
X
X
H
X
X
X
X
A0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
H
H
L
V
V
V
A9
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
©2001 Micron Technology, Inc. All rights reserved.
ID
ID
ID
V
V
V
V
V
V
V
PPH
PPH
PPH
PPH
PPH
PPH
X
X
X
X
X
X
X
X
X
X
X
X
X
PP
DQ0–DQ7
Data-Out
10h/40h
10h/40h
Data-In
Data-In
Data-In
High-Z
High-Z
High-Z
8Mb
D0h
D0h
D0h
20h
20h
89h
98h
99h
FFh
FFh