m58wr032et STMicroelectronics, m58wr032et Datasheet - Page 58

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m58wr032et

Manufacturer Part Number
m58wr032et
Description
32 Mbit 2mb X 16, Multiple Bank, Burst 1.8v Supply Flash Memory
Manufacturer
STMicroelectronics
Datasheet
M58WR032ET, M58WR032EB
Table 33. Device Geometry Definition
58/81
Offset Word
Mode
2Ch
27h
28h
29h
2Ah
2Bh
2Dh
2Eh
2Fh
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
38h
30h
31h
32h
33h
34h
35h
38h
Reserved
Reserved
003Eh
003Eh
0016h
0001h
0000h
0003h
0000h
0002h
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
Data
Device Size = 2
Maximum number of bytes in multi-byte program or page = 2
Region 2 Information
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
Reserved for future erase block region information
Reserved for future erase block region information
Flash Device Interface Code description
Number of identical sized erase block regions within the device
bit 7 to 0 = x = number of Erase Block Regions
Region 1 Information
Number of identical-size erase blocks = 003Eh+1
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
Number of identical-size erase blocks = 0007h+1
Region 1 Information
Number of identical-size erase block = 0007h+1
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
Region 2 Information
Number of identical-size erase block = 003Eh+1
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
n
in number of Bytes
Description
n
64 KBytes
4 MBytes
64 KByte
8 KBytes
8 KByte
Async.
8 Byte
Value
x16
NA
NA
63
63
2
8
8

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