e28f016xd Intel Corporation, e28f016xd Datasheet - Page 26

• Manufacturer Part Number: e28f016xd
• Description: 16-mbit 1 Mbit X 16 Dram-interface Flash Memory
• Manufacturer: Intel Corporation

28F016XD FLASH MEMORY
5.5 DC Characteristics
V
3/5# = Pin Set Low for 5.0V Operations
26
I
I
I
I
I
I
I
I
V
V
V
V
V
V
V
V
V
CC
Sym
CCW
CCE
CCES
PPS
PPD
PPW
PPE
PPES
IL
IH
OL
OH1
OH2
PPLK
PPH
PPH
LKO
= 5.0V ± 0.5V, T
1 V
2 V
V
Current
V
V
Current
V
Current
V
Current
V
Current
V
V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
Voltage
Operations
Operations
V
Voltage
CC
CC
CC
PP
PP
PP
PP
PP
PP
PP
PP
CC
Standby/Read
Deep Power-Down
Word Program
Block Erase Current
Erase Susp.Current
Erase/Program Lock
during Program/Erase
during Program/Erase
Word Program
Block Erase Current
Erase Suspend
Erase/Program Lock
Parameter
A
= 0°C to +70°C
(Continued)
Notes
1,6
1,6
1,2
1,6
1,6
3,6
1
1
1
6
6
6
6
6
3
3
V
–0.5
0.85
11.4
Min
V
2.0
0.4
0.0
4.5
2.0
CC
CC
–
12.0
Typ
± 1
0.2
5.0
25
25
18
20
30
17
16
30
2
7
5
V
Max
± 10
0.45
12.6
200
200
0.8
CC
0.5
1.5
5.5
35
40
25
30
12
22
10
20
4
5
+
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
Word Program in Progress
V
Word Program in Progress
V
Block Erase in Progress
V
Block Erase in Progress
RAS#, CAS# = V
Block Erase Suspended
V
V
RP# = GND ± 0.2V
V
Word Program in Progress
V
Word Program in Progress
V
Block Erase in Progress
V
Block Erase in Progress
Block Erase Suspended
V
I
V
I
V
I
OL
OH
OH
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
CC
CC
CC
= 5.8 mA
= –2.5 mA
= –100 µA
= 12.0V ± 5%
= 5.0V ± 10%
= 12.0V ± 5%
= 5.0V ± 10%
> V
= 12.0V ± 5%
= 5.0V ± 10%
= 12.0V ± 5%
= 5.0V ± 10%
= V
= V
= V
V
Test Condition
CC
CC
CC
CC
CC
Min
Min
Min
E
IH