s-8211caj-m5t1g Seiko Instruments Inc., s-8211caj-m5t1g Datasheet - Page 26

• Manufacturer Part Number: s-8211caj-m5t1g
• Description: Battery Protection Ic For 1-cell Pack
• Manufacturer: Seiko Instruments Inc.

*1. If the threshold voltage of an FET is low, the FET may not cut the charging current. If an FET with a threshold voltage
*2. If the withstanding voltage between the gate and source is lower than the charger voltage, the FET may be destroyed.
*3. If R1 has a high resistance, the voltage between VDD pin and VSS pin may exceed the absolute maximum rating when
*4. If a capacitor of less than 0.022 µF is connected to C1, DO pin may oscillate when load short-circuiting is detected. Be
*5. If R2 has a resistance higher than 2 kΩ, the charging current may not be cut when a high-voltage charger is connected.
Caution 1. The above constants may be changed without notice.
26
Symbol
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series
FET1
FET2
R1
C1
R2
Battery Protection IC Connection Example
equal to or higher than the overdischarge detection voltage is used, discharging may be stopped before overdischarge
is detected.
a charger is connected in reverse since the current flows from the charger to the IC. Insert a resistor of 100 Ω or higher
as R1 for ESD protection.
sure to connect a capacitor of 0.022 µF or higher to C1.
2. It has not been confirmed whether the operation is normal or not in circuits other than the above
N-channel
MOS FET
N-channel
MOS FET
Resistor
Capacitor
Resistor
example of connection. In addition, the example of connection shown above and the constant do not
guarantee proper operation.
constant.
Part
Discharge control
Charge control
ESD protection,
For power fluctuation
For power fluctuation
Protection for reverse
connection of a
charger
Purpose
Battery C1
R1
Table 17 Constants for External Components
VDD
VSS
Perform thorough evaluation using the actual application to set the
Seiko Instruments Inc.
0.1 µF
220 Ω
DO
2 kΩ
Typ.
−
−
FET1
S-8211C Series
Figure 14
0.022 µF
CO
100 Ω
300 Ω
Min.
−
−
FET2
1.0 µF
330 Ω
Max.
2 kΩ
VM
−
−
R2
Threshold voltage ≤ Overdischarge
detection voltage
Gate to source withstanding voltage ≥
Charger voltage
Threshold voltage ≤ Overdischarge
detection voltage
Gate to source withstanding voltage ≥
Charger voltage
Resistance should be as small as
possible to avoid lowering the
overcharge detection accuracy due to
current consumption.
Connect a capacitor of 0.022 µF or
higher between VDD pin and VSS pin.
Select as large a resistance as possible
to prevent current when a charger is
connected in reverse.
EB+
EB−
Remark
*2
*2
*1
*1
*3
*5
Rev.5.0
_00
*4