stm8af6166t STMicroelectronics, stm8af6166t Datasheet - Page 60

• Manufacturer Part Number: stm8af6166t
• Description: Automotive 8-bit Mcu, With Up To 128 Kbytes Flash, Eeprom, 10-bit Adc, Timers, Lin, Can, Usart, Spi, I2c, 3 V To 5.5 V
• Manufacturer: STMicroelectronics

Electrical characteristics
11.3.4
60/84
Table 28.
1. Guaranteed by characterization, not tested in production.
2. For applications using EEPROM, the read/write conditions must be taken into account.
3. Guaranteed by design
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electro magnetic susceptibility)
While executing a simple application (toggling 2 LEDs through I/O ports), the product is
stressed by two electro magnetic events until a failure occurs (indicated by the LEDs).
●
●
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Symbol
t
N
WU
I
I
DD
DD
RW
ESD: Electro-static discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms
with the IEC 1000-4-4 standard.
(3)
Erase/write cycles (program memory)
Erase/write cycles (data memory)
Supply current (Flash programming or
erasing for 1 to 128 bytes (block)
Supply current (standby mode)
Wake-up time from off mode to run
mode
Wake-up time from standby mode to
run mode
Flash program memory/data EEPROM memory (continued)
Parameter
T
A
= -40 to +125 °C
T
T
V
V
V
V
V
Conditions
A
A
DD
DD
DD
DD
DD
= +125 °C
= +25 °C
= 3.3 V
= 5.0 V
= 5.0 V
= 5.0 V
= 5.0 V
STM8AF61xx, STM8AF51xx
Min
(1)
TBD
TBD
Typ
25
2
2
300 k
100 k
Max
TBD
TBD
TBD
1 k
DD
and V
cycles
Unit
mA
µA
µs
µs
SS