stm8af6199 STMicroelectronics, stm8af6199 Datasheet - Page 58

• Manufacturer Part Number: stm8af6199
• Description: Automotive 8-bit Mcu, With Up To 128 Kbytes Flash, Eeprom, 10-bit Adc, Timers, Lin, Can, Usart, Spi, I 2c, 3 V To 5.5 V
• Manufacturer: STMicroelectronics

Electrical characteristics
11.3.1
58/100
Table 18.
1. Guaranteed by design, not tested in production
2. TBD = To be determined
3. Reset is always generated after a t
Supply current characteristics
The current consumption is measured as described in
page
Total current consumption
The MCU is placed under the following conditions:
●
●
Subject to general operating conditions for V
Note on the run-current typical and worst-case values
●
●
V
Symbol
HYS(BOR)
t
minimum operating voltage (V
t
TEMP
V
V
VDD
All I/O pins in input mode with a static value at V
All peripherals are disabled except if explicitly mentioned.
Typical device currents values are representative of an application set-up without any
I/O activity at 25 °C. The worst case values correspond to the actual test-limits and
include both internal and external device I/O current.
During the execution of an actual application program, the number of read access
cycles to the code memory depends on its structure. A code doing arithmetical
calculations reads the memory less frequently than programs with jump, loop or data
manipulation instructions. The fast-reading access in a Flash memory needs much
more power compared to a RAM. Consequently, the run-current for EEPROM
execution depends strongly on the actual application code structure. The
measurements in the tables below were made using a short, representative code with
move, jump and arithmetic operations. The worst case, an infinite loop of ‘while’
instructions takes approximately 25 % more power. For RAM execution, such power to
program structure relations has not been observed.
IT+
IT-
55.
V
V
Reset release
delay
Reset generation
delay
Power-on reset
threshold
Brown-out reset
threshold
Brown-out reset
hysteresis
Operating conditions at power-up/power-down
DD
DD
Parameter
rise time rate
fall time rate
(3)
(3)
DD
min) when the t
V
V
TEMP
DD
DD
rising
falling
delay. The application must ensure that V
Conditions
TEMP
DD
delay has elapsed.
and T
DD
A
Figure 8 on page 54
.
or V
TBD
TBD
SS
20
20
2.65
2.58
Min
STM8AF61xx, STM8AF51xx
(1)
(2)
(no load)
(2)
(2)
DD
70
2.73
Typ
2.8
is still above the
3
3
(1)
and
Figure 9 on
Max
2.95
2.88
∞
∞
Unit
µs/V
mV
ms
µs
V
V