tza3011a NXP Semiconductors, tza3011a Datasheet - Page 15

• Manufacturer Part Number: tza3011a
• Description: 30 Mbit/s Up To 3.2 Gbit/s A-rate Tm Laser Drivers
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Table 7:
T
to 3.47 V; R
R
[1]
[2]
[3]
[4]
[5]
9397 750 14437
Product data sheet
Symbol
Alarm operating current: pins MAXOP and ALOP
V
N
V
Alarm monitor current: pins MAXMON and ALMON
V
N
V
Reference block: pins RREF and VTEMP
V
V
TC
I
I
source(VTEMP)
sink(VTEMP)
amb
MAXOP
ref(MAXOP)
D(ALOP)L
ref(MAXMON)
D(ALMON)L
RREF
VTEMP
MAXOP
MAXMON
VTEMP
The total power dissipation P
the laser diode voltage which results in a lower total power dissipation.
The specification of the offset voltage is guaranteed by design.
Any (AVR, ER) settings need to respect I
cannot be reached.
The relation between the sink current I
external load on pin LA. The voltage on pin MODIN programmes the modulation current I
the 100
result in an I
application load.
V
= 40 C to +85 C; R
VTEMP
= 20 k ; positive currents flow into the IC; all voltages are referenced to ground; unless otherwise specified.
AVR
= 1.31 + TC
Characteristics
internal resistor connected to pins LA. When the modulation current is programmed to 100 mA, a typical Z
o(LA)
= 7.5 k ; R
Parameter
reference voltage on
pin MAXOP
ratio of I
I
drain voltage at active
alarm
reference voltage on
pin MAXMON
ratio of I
I
drain voltage at active
alarm
reference voltage
temperature dependent
voltage
temperature coefficient of
V
source current of
pin VTEMP
sink current of pin VTEMP
MAXOP
MAXMON
VTEMP
current of 80 mA, while 20 mA flows via the internal resistor. This corresponds to a voltage swing of 2 V on the real
VTEMP
oper(alarm)
MON(alarm)
ER
th(j-a)
…continued
T
= 62 k ; R
tot
j
and T
= 35 K/W; P
is calculated with V
and
and
j
= T
o(LA)
MODIN
MON
amb
and the modulation current I
+ P
tot
> 50 A and I
Conditions
I
I
I
I
I
I
R
C
T
T
MAXOP
oper(alarm)
ALOP
MAXMON
MON(alarm)
ALMON
= 400 mW; V
= 6.2 k ; R
j
j
tot
RREF
RREF
V
V
= 25 C; C
= 25 C to +125 C
Rev. 06 — 20 January 2005
BIAS
CCO
CCO
R
= 500 A
th(j-a)
= 10 k (1 %);
< 100 pF
= 500 A
= 10 A to 200 A
= V
= 3.3 V
= 5.0 V
= 10 A to 200 A
= 7.5 mA to 150 mA
= 150 A to 3000 A
.
CCO
MON
BIASIN
VTEMP
CCA
= 3.3 V and I
< 2500 A. Therefore, for large ER settings, minimum/maximum AVR
= 3.14 V to 3.47 V; V
= 6.8 k ; R
< 2 nF
mod
30 Mbit/s up to 3.2 Gbit/s A-rate
is:
BIAS
TZA3011A; TZA3011B
I
o LA
PWA
= 20 mA. In the application V
= 10 k ; R
=
mod
I
mod
CCD
. This current is divided between Z
[5]
[5]
= 3.14 V to 3.47 V; V
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Min
1.15
700
750
0
1.15
10
0
1.15
1.15
-
-
1
-------------------------------
100
RREF
+
100
Z
= 10 k ; R
Typ
1.2
800
850
-
1.2
15
-
1.20
1.20
-
-
L LA
2.2
BIAS
where Z
will be V
MAXMON
L(LA)
laser drivers
CCO
L(LA)
Max
1.25
900
950
0.4
1.25
20
0.4
1.25
1.25
-
-
1
of 25
CCO
= 3.14 V
is the
= 13 k ;
L(LA)
15 of 30
minus
Unit
V
V
V
V
V
V
mV/K
mA
mA
will
and