zxms6004dg Zetex Semiconductors plc., zxms6004dg Datasheet

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zxms6004dg

Manufacturer Part Number
zxms6004dg
Description
60v N-channel Self Protected Enhancement Mode Intellifet Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet

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ZXMS6004DG
60V N-channel self protected enhancement mode
Intellifet MOSFET
Summary
Continuous drain source voltage
On-state resistance
Nominal load current (V
Clamping energy
Description
The ZXMS6004DG is a self protected low side MOSFET with logic level
input. It integrates over-temperature, over-current, over-voltage (active
clamp) and ESD protected logic level functionality. The ZXMS6004DG is
ideal as a general purpose switch driven from 3.3V or 5V
microcontrollers in harsh environments where standard MOSFETs are
not rugged enough.
Features
Ordering information
Issue 1 - December 2008
© Diodes Incorporated, 2008
Device
ZXMS66004DGTA
Compact high power dissipation package
Low input current
Logic Level Input (3.3V and 5V)
Short circuit protection with auto restart
Over voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input Protection (ESD)
High continuous current rating
IN
Part mark
ZXMS
6004D
= 5V)
Reel size
(inches)
7
500 mΩ
1.3 A
490mJ
60 V
1
12 embossed
Diodes Incorporated
Tape width
A Product Line of
(mm)
D
Quantity per reel
3,000 units
Top view
www.diodes.com
www.zetex.com
IN
D
S

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zxms6004dg Summary of contents

Page 1

... IN Clamping energy Description The ZXMS6004DG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6004DG is ideal as a general purpose switch driven from 3. microcontrollers in harsh environments where standard MOSFETs are not rugged enough ...

Page 2

... This does not compromise the product’s ability to self-protect at low Issue 1 - December 2008 © Diodes Incorporated, 2008 Over-voltage Protection dV/dt Limitation Over-temperature Protection Logic Over-current Protection 2 ZXMS6004DG www.zetex.com www.diodes.com ...

Page 3

... T stg ( ( = ESD V CDM Symbo R θJA R θJA R θJC 3 ZXMS6004DG Limit Unit -0.5 ... + limit │I │≤2 IN -40 to +150 °C -55 to +150 °C 1.3 W 10.4 mW/°C 3 mW/° 2 ...

Page 4

... Recommended operating conditions The ZXMS6004DG is optimised for use with µC operating from 3.3V and 5V supplies. Symbol Description V Input voltage range IN T Ambient temperature range A V High level input voltage for MOSFET Low level input voltage for MOSFET to be off IL V Peripheral supply voltage (voltage to which load is referred) ...

Page 5

... DS(on) R 350 500 DS(on 0.7 1.7 D(LIM 2.2 D(LIM d(on d(off ZXMS6004DG Unit Conditions V I =10mA =12V μA V =36V =1mA μA V =+3V IN μA V =+5V IN μA V =+5V IN mΩ ...

Page 6

... Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods.. Issue 1 - December 2008 © Diodes Incorporated, 2008 Symbol Min Typ Max TJT 150 175 10 6 ZXMS6004DG Unit Conditions °C °C www.zetex.com www.diodes.com ...

Page 7

... Typical characteristics Issue 1 - December 2008 © Diodes Incorporated, 2008 ZXMS6004DG 7 www.zetex.com www.diodes.com ...

Page 8

... Issue 1 - December 2008 © Diodes Incorporated, 2008 ZXMS6004DG 8 www.zetex.com www.diodes.com ...

Page 9

... Issue 1 - December 2008 © Diodes Incorporated, 2008 Inches Dim. Min. Max. - 0.071 D 0.0008 0.004 e 0.0610 0.0649 e1 0.026 0.033 E 0.114 0.122 E1 0.009 0.013 L 9 ZXMS6004DG Millimeters Inches Min. Max. Min. 6.70 6.30 0.248 2.30 BSC 0.0905 BSC 4.60 BSC 0.181 BSC 6.70 7.30 0.264 3.30 3.70 0.130 0.90 - 0.355 www.zetex.com www.diodes.com Max. ...

Page 10

... Changning Road Hsin-Tien Shanghai, China Taipei, Taiwan Tel: (+86) 215 241 4882 Tel: (+886) 289 146 000 Fax (+86) 215 241 4891 Fax: (+886) 289 146 639 10 ZXMS6004DG Shenzhen Korea ANLIAN Plaza, #4018 6 Floor, Changhwa B/D, Jintian Road 1005-5 Yeongtong-dong, Futian CBD, Yeongtong-gu, Suwon-si, ...

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