zxms6004dg Zetex Semiconductors plc., zxms6004dg Datasheet - Page 5

• Manufacturer Part Number: zxms6004dg
• Description: 60v N-channel Self Protected Enhancement Mode Intellifet Mosfet
• Manufacturer: Zetex Semiconductors plc.

Electrical characteristics (at T
Notes:
(d) The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This
Issue 1 - December 2008
© Diodes Incorporated, 2008
Parameter
Static Characteristics
Drain-Source clamp voltage
Off-state drain Ccrrent
Off-state drain current
Input threshold voltage
Input current
Input current
Input current while over
temperature active
Static Drain-Source on-state
resistance
Static Drain-Source on-state
resistance
Continuous drain current
Continuous drain cCurrent
(a)
Continuous drain current
Continuous drain current
Current limit
Current limit
Dynamic characteristics
Turn-on delay time
Rise time
Turn-off delay time
Fall time
allows the device to be used in the fully on state without interference from the current limit. The device is fully
protected at all drain currents, as the low power dissipation generated outside saturation makes current limit
unnecessary.
(c)
(a)
(b)
(b)
Symbol
V
I
I
V
I
I
R
R
I
I
I
I
I
I
t
t
t
f
DSS
DSS
IN
IN
D
D
D
D
D(LIM)
D(LIM)
d(on)
r
d(off)
f
DS(AZ)
IN(th)
DS(on)
DS(on)
amb
= 25°C unless otherwise stated).
Min
60
0.7
0.9
1.0
1.2
1.3
0.7
1
5
Typ
65
1
60
120
400
350
1.7
2.2
5
10
45
15
Max
70
500
1
1.5
100
200
400
600
500
Unit
mΩ
mΩ
nA
μA
μA
μA
μA
μs
μs
μs
μs
A
A
A
A
A
A
V
V
ZXMS6004DG
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
Conditions
D
DS
DS
DS
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
IN
DD
GS
=10mA
=+3V
=+5V
=+5V
=+3V, I
=+5V, I
=3V; T
=5V; T
=3V; T
=5V; T
=+3V,
=+5V
=12V, V
=36V, V
=V
=12V, I
=5V
www.diodes.com
GS
www.zetex.com
, I
A
A
A
A
D
D
D
D
=25°C
=25°C
=25°C
=25°C
=0.5A
=0.5A
IN
IN
=1mA
=0.5A,
=0V
=0V