tle5011 Infineon Technologies Corporation, tle5011 Datasheet - Page 11

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tle5011

Manufacturer Part Number
tle5011
Description
Gmr Based Angular Sensor
Manufacturer
Infineon Technologies Corporation
Datasheet

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2.4
The GMR sensor is implemented in vertical integration. This means that the GMR active
areas are integrated above the logic portion of the TLE5011 device. GMR elements
change their resistance depending on the direction of the magnetic field.
Four individual GMR elements are connected to one Wheatstone Sensor Bridge. These
GMR elements sense one of two components of the applied magnetic field:
• X component, V
• Y component, V
The advantage of a full-bridge structure is that the amplitude of the GMR signal is
doubled.
Figure 3
Note: In
1)
Target Data Sheet
The arrows in the resistor symbols show the direction of the reference layer
Reference Layer.
Figure
GMR Functionality
S
Sensitive bridges of the GMR Sensor
3, the arrows in the resistor symbols indicate the direction of the
X
Y
(cosine) or the
(sine)
GMR Resistors
ADC
X
V
+
X
ADC
X
-
GND
11
90°
ADC
Y
+
V
Y
ADC
1)
Y
-
V
DDG
N
V 0.11, 2008-01
TLE5011
General

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