2sc5408-t1 Renesas Electronics Corporation., 2sc5408-t1 Datasheet - Page 2

• Manufacturer Part Number: 2sc5408-t1
• Description: Npn Epitaxial Silicon Transistor For Microwave High-gain Amplification
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
TYPICAL CHARACTERISTICS (T
2
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
Marking
h
FE
Notes 1. Pulse measurement PW
200
100
PARAMETER
25
20
15
10
2. Measured with three-pin bridge, with emitter pin connected to the bridge guard.
Rank
0
5
0
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
V
T
CE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
A
1.0
- Ambient Temperature - °C
- Collector to Emitter Voltage - V
50
T1E
70 to 40
2.0
FB
100
SYMBOL
|S
I
I
Cre
3.0
h
NF
CBO
EBO
21e
f
FE
T
30 mW
A
|
200
180
160
140
120
100
2
350 s, duty cycle
I
80
60
40
B
= 25 C)
= 20
A
A
A
A
A
A
A
A
A
A
150
V
V
V
V
V
V
V
= 25 C)
CB
EB
CE
CE
CB
CE
CE
A
= 5 V, I
= 1 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
TEST CONDITIONS
E
C
C
C
E
C
C
= 0
= 0
= 0, f = 1 MHz
= 7 mA
= 7 mA, f = 2.0 GHz
= 7 mA, f = 2.0 GHz
= 1 mA, f = 2.0 GHz
2 %, pulsed
500
200
100
50
40
30
20
10
50
20
10
Note 1
0
1
V
CE
= 2 V
Note 2
2
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
V
BE
I
DC CURRENT GAIN vs.
COLLECTOR CURRENT
C
- Base to Emitter Voltage - V
- Collector Current - mA
5
V
CE
MIN.
70
13
= 1 V
0.5
10
TYP.
15.5
20
V
0.1
1.1
17
CE
= 2 V
50
MAX.
0.15
140
0.1
0.1
1.8
100
1.0
2SC5408
UNIT
GHz
pF
dB
dB
A
A