2sc5408-t1 Renesas Electronics Corporation., 2sc5408-t1 Datasheet - Page 3

• Manufacturer Part Number: 2sc5408-t1
• Description: Npn Epitaxial Silicon Transistor For Microwave High-gain Amplification
• Manufacturer: Renesas Electronics Corporation.

20
10
0
4
3
2
1
0
1
1
NF vs. I
I
I
f
40
30
20
10
C
C
T
0
- Collector Current - mA
- Collector Current - mA
vs. I
0.1
C
C
characteristics
characteristics
10
10
V
f = 2 GHz
V
f = 2 GHz
CE
CE
= 2 V
= 2 V
|S
100
100
21e
|
f - Frequency - GHz
2
vs. f characteristics
0.5
0.3
0.2
0.1
18
16
14
12
10
8
6
4
2
0
0
1
1
1.0
V
CB
|S
- Collector to Base Voltage - V
21e
I
C
|
2
- Collector Current - mA
vs. I
C
V
C
re
CE
characteristics
vs. V
10
10
2.0
= 2 V
CB
2.6
I
I
C
C
= 7 mA
= 1 mA
V
f = 2 GHz
f = 1 MHz
2SC5408
CE
= 2 V
100
100
3