2sc5792 Sanyo Semiconductor Corporation, 2sc5792 Datasheet

2sc5792

Manufacturer Part Number

2sc5792

Description

Npn Triple Diffused Planar Silicon Transistor

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.2SC5792.pdf (4 pages)

Current page: 1 of 4
Download datasheet (32Kb)

Ordering number : ENN6994A

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Collector-to-Emitter Breakdown Voltage

Emitter Cutoff Current

•

High speed.

High breakdown voltage(V CBO =1600V).

High reliability(Adoption of HVP process).

Adoption of MBIT process.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

V( BR)CEO

Symbol

V CBO

V CEO

V EBO

I CBO

I EBO

I CES

Tstg

I CP

Horizontal Deflection Output Applications

P C

I C

Tc=25 C

V CB =800V, I E =0

V CE =1600V, R BE =0

I C =10mA, I B =

V EB =4V, I C =0

2SC5792

Ultrahigh-Definition CRT Display

Conditions

Package Dimensions

unit : mm

2174A

Conditions

NPN Triple Diffused Planar Silicon Transistor

52003 TS IM TA-100439 / 62001 TS IM TA-3325

5.45

16.0

2.8

3.4

0.7

2.0

[2SC5792]

min

800

5.6

Ratings

0.9

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-3PMLH

typ

3.1

Ratings

2.1

2SC5792

Continued on next page.

--55 to +150

max

1600

800

150

3.0

1.0

No.6994-1/4

Unit

Related parts for 2sc5792

2sc5792 Summary of contents

Page 1

... Tc= Tstg Symbol Conditions I CBO V CB =800V CES V CE =1600V BR)CEO I C =10mA EBO V EB =4V 52003 TS IM TA-100439 / 62001 TS IM TA-3325 2SC5792 [2SC5792] 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0 Base 2 : Collector 5. Emitter SANYO : TO-3PMLH Ratings ...

Page 2

... Collector Current 2SC5792 Symbol Conditions =5V = =5V =11A V CE (sat =10A =2. (sat =10A =2.5A t stg I C =7A =0.9A =--3. =7A =0.9A =--3.5A ...

Page 3

... Tc= Single pulse 0. 1.0 100 Collector-to-Emitter Voltage 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 100 Ambient Temperature 2SC5792 1 0 0.1 IT03567 1 0 1000 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2003. Specifications and information herein are subject to change without notice. 2SC5792 PS No.6994-4/4 ...

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