2sc5792 Sanyo Semiconductor Corporation, 2sc5792 Datasheet - Page 2
2sc5792
Manufacturer Part Number
2sc5792
Description
Npn Triple Diffused Planar Silicon Transistor
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.2SC5792.pdf
(4 pages)
Continued from preceding page.
Switching Time Test Circuit
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
Fall Time
10
14
12
10
8
6
4
2
5
3
2
7
5
3
0
0.1
0
1
INPUT
2
Parameter
PW=20 s
D.C. 1%
Collector-to-Emitter Voltage, V CE -- V
2
3
Collector Current, I C -- A
3
5
50
V R
V BE = --5V
7
I C -- V CE
h FE -- I C
4
1.0
I B1
100 F
I B2
R B
5
+
2
6
3
V CE (sat)
V BE (sat)
Symbol
h FE 1
h FE 2
470 F
t stg
7
t f
V CC =200V
5
+
8
7
V CE =5V
OUTPUT
R L
28.6
0.4A
0.2A
0.1A
I B =0
10
V CE =5V, I C =1A
V CE =5V, I C =11A
I C =10A, I B =2.5A
I C =10A, I B =2.5A
I C =7A, I B1 =0.9A, I B2 =--3.5A
I C =7A, I B1 =0.9A, I B2 =--3.5A
IT03563
IT03565
9
10
2
2SC5792
Conditions
1.0
0.1
10
16
14
12
10
8
6
4
2
0
7
5
3
2
7
5
3
2
7
5
3
0.1
0
V CE =5V
I C / I B =5
2
0.2
Base-to-Emitter Voltage, V BE -- V
3
Collector Current, I C -- A
5
0.4
V CE (sat) -- I C
min
7
I C -- V BE
10
1.0
4
0.6
Ratings
typ
2
3
0.8
5
max
1.5
3.0
0.2
7
7
3
1.0
10
No.6994-2/4
IT03564
IT03566
Unit
V
V
s
s
1.2
2