2sc5618 Renesas Electronics Corporation., 2sc5618 Datasheet - Page 2

• Manufacturer Part Number: 2sc5618
• Description: Npn Silicon Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
h
2
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
Reverse Transfer Capacitance
FE
Notes 1. Pulse measurement: PW
h
Marking
CLASSIFICATION
FE
Rank
Value
2. Collector to base capacitance when the emitter grounded
Parameter
70 to 100
W1
EB
Symbol
h
C
S
S
FE
I
I
re
NF
NF
90 to 130
CBO
EBO
f
f
21e
21e
T
T
Note 2
Note 1
350 s, Duty Cycle
W2
FB
2
2
A
V
V
V
V
V
V
V
V
Z
V
Z
V
= +25 C)
Data Sheet PU10083EJ02V0DS
S
S
CB
EB
CE
CE
CE
CE
CE
CE
CE
CB
= Z
= Z
= 5 V, I
= 1 V, I
= 2 V, I
= 2 V, I
= 1 V, I
= 2 V, I
= 1 V, I
= 2 V, I
= 1 V, I
= 2 V, I
opt
opt
Test Conditions
C
E
C
C
C
C
C
C
C
E
= 0 mA
= 0 mA
= 20 mA
= 20 mA, f = 2 GHz
= 10 mA, f = 2 GHz
= 20 mA, f = 2 GHz
= 10 mA, f = 2 GHz
= 3 mA, f = 2 GHz,
= 3 mA, f = 2 GHz,
= 0 mA, f = 1 MHz
2%
MIN.
9.0
7.0
8.5
6.0
70
–
–
–
–
–
TYP.
14.0
12.0
10.0
9.0
1.4
1.5
0.4
–
–
–
MAX.
100
100
130
2.0
2.0
0.8
–
–
–
–
2SC5618
GHz
GHz
Unit
nA
nA
dB
dB
dB
dB
pF
–