2sc5618 Renesas Electronics Corporation., 2sc5618 Datasheet - Page 3

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2sc5618

Manufacturer Part Number
2sc5618
Description
Npn Silicon Rf Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
0.0001
0.001
0.01
300
250
200
150
100
100
0.1
50
10
35
30
25
20
15
10
90
0
1
5
0
0.4
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
500 A
V
CE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
= 1 V
Collector to Emitter Voltage V
0.5
25
Base to Emitter Voltage V
Ambient Temperature T
400 A
1
0.6
50
Mounted on Glass Epoxy PCB
(1.08 cm
0.7
75
2
2
1.0 mm (t) )
100
0.8
I
B
A
: 50 A step
I
BE
B
(˚C)
3
= 50 A
CE
300 A
200 A
100 A
(V)
125
0.9
(V)
Data Sheet PU10083EJ02V0DS
150
1.0
4
0.0001
0.001
0.01
100
0.6
0.5
0.4
0.3
0.2
0.1
0.1
10
0
1
0.4
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
A
V
= +25 C)
CE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
= 2 V
0.5
Collector to Base Voltage V
Base to Emitter Voltage V
1
0.6
2
0.7
3
0.8
BE
CB
f = 1 MHz
(V)
4
(V)
0.9
2SC5618
1.0
5
3

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