2sc5975 Renesas Electronics Corporation., 2sc5975 Datasheet

no-image

2sc5975

Manufacturer Part Number
2sc5975
Description
Silicon Npn Epitaxial High Frequency Low Noise Amplifier / Oscillator
Manufacturer
Renesas Electronics Corporation.
Datasheet
2SC5975
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier / Oscillator
Features
Outline
Note:
Absolute Maximum Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Note:
Rev.1.00, Jul.06.2004, page 1 of 17
High gain bandwidth product
f
High power gain and low noise figure;
PG = 17.5 dB typ. , NF = 1.15 dB typ. at f = 1.8 GHz
T
= 20 GHz typ.
1. Value on PCB ( FR-4 : 40 x 40 x 1.6mm Double side )
Marking is “WU-”.
Item
MFPAK-4
3
4
WU-
2
1
Symbol
V
V
V
Tstg
Pc
CBO
CEO
I
Tj
EBO
C
*1
3
2
4
1
–55 to +150
Ratings
200
150
1.5
12
35
4
1. Emitter
2. Collector
3. Emitter
4. Base
REJ03G0381-0100Z
Unit
mW
mA
V
V
V
C
C
Jul.06.2004
(Ta = 25°C)
Rev.1.00

Related parts for 2sc5975

2sc5975 Summary of contents

Page 1

... Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator Features High gain bandwidth product GHz typ. T High power gain and low noise figure 17.5 dB typ 1.15 dB typ 1.8 GHz Outline MFPAK-4 3 WU- 4 Note: Marking is “WU-”. Absolute Maximum Ratings ...

Page 2

... Electrical Characteristics Item Symbol Collector cutoff current I CBO Collector cutoff current I CEO Emitter cutoff current I EEO DC current transfer ratio h FE Collector output capacitance C ob Gain bandwidth product f T Power gain PG Noise figure NF Rev.1.00, Jul.06.2004, page Min Typ Max Unit — ...

Page 3

... Main Characteristics Collector Power Dissipation Curve 200 Value on PCB (FR 1.6 mm 150 100 100 Ambient Temperature DC Current Transfer Ratio vs. 200 Collector Current 180 160 140 120 100 Collector Current Emitter Input Capacitance vs. ...

Page 4

... Gain Bandwidth Product vs. Collector Current GHz Collector Current Noise Figure vs. Collector Current 1.8 GHz Collector Current MSG • MAG vs. Collector Current GHz 25 20 MSG Collector Current Rev ...

Page 5

... S Parameter vs. Frequency 1 1 –.2 –.4 –.6 –1.5 –.8 –1 Condition: VCE = 100 to 1000 MHz (100 MHz step) 1000 to 5100 MHz (200 MHz step Parameter vs. Frequency 12 Scale: 0.1 / div. ...

Page 6

... S Parameter vs. Frequency 1 1 –.2 –.4 –.6 –1.5 –.8 –1 Condition: VCE = 100 to 1000 MHz (100 MHz step) 1000 to 5100 MHz (200 MHz step Parameter vs. Frequency 12 Scale: 0.1 / div. ...

Page 7

... S Parameter vs. Frequency 1 1 –.2 –.4 –.6 –1.5 –.8 –1 Condition: VCE = 100 to 1000 MHz (100 MHz step) 1000 to 5100 MHz (200 MHz step Parameter vs. Frequency 12 Scale: 0.1 / div. ...

Page 8

... S parameter S11 f(MHz) MAG ANG 100 0.828 -13.3 200 0.830 -26.4 300 0.831 -39.1 400 0.801 -51.5 500 0.778 -63.1 600 0.750 -74.3 700 0.716 -84.5 800 0.703 -93.5 900 0.680 -102.2 1000 0.665 -110.1 1100 0.662 -115.8 1200 0.636 -123.9 1300 0.626 -130.0 1400 0.617 -135.7 1500 ...

Page 9

... S parameter S11 f(MHz) MAG ANG 100 0.718 -20.9 200 0.711 -40.8 300 0.698 -58.9 400 0.673 -75.5 500 0.652 -89.8 600 0.632 -102.4 700 0.611 -113.2 800 0.603 -122.1 900 0.592 -130.3 1000 0.588 -137.3 1100 0.584 -142.5 1200 0.577 -149.2 1300 0.575 -154.2 1400 ...

Page 10

... S parameter S11 f(MHz) MAG ANG 100 0.561 -61.2 200 0.557 -66.3 300 0.562 -89.9 400 0.561 -108.3 500 0.561 -122.2 600 0.560 -133.2 700 0.559 -142.1 800 0.561 -149.0 900 0.561 -155.3 1000 0.563 -160.4 1100 0.564 -164.5 1200 0.567 -169.0 1300 0.569 -172 ...

Page 11

... S parameter S11 f(MHz) MAG ANG 100 0.835 -11.7 200 0.838 -23.3 300 0.841 -34.6 400 0.813 -45.8 500 0.792 -56.4 600 0.764 -66.9 700 0.730 -76.6 800 0.715 -85.3 900 0.689 -93.8 1000 0.672 -101.7 1100 0.669 -107.6 1200 0.636 -115.7 1300 0.623 -121.9 1400 0.612 -127.9 1500 0.603 -133 ...

Page 12

... S parameter S11 f(MHz) MAG ANG 100 0.723 -17.9 200 0.717 -35.3 300 0.705 -51.6 400 0.678 -66.8 500 0.655 -80.4 600 0.630 -92.8 700 0.605 -103.7 800 0.593 -112.9 900 0.578 -121.4 1000 0.569 -128.9 1100 0.565 -134.6 1200 0.553 -141.6 1300 0.548 -147.1 1400 0.545 -152 ...

Page 13

... S parameter S11 f(MHz) MAG ANG 100 0.566 -28.1 200 0.560 -53.7 300 0.554 -75.5 400 0.543 -93.7 500 0.536 -108.4 600 0.528 -120.5 700 0.523 -130.5 800 0.520 -138.5 900 0.518 -145.6 1000 0.519 -151.6 1100 0.519 -156.4 1200 0.519 -161.6 1300 0.520 -165.8 1400 0 ...

Page 14

... S parameter S11 f(MHz) MAG ANG 100 0.839 -11.0 200 0.843 -22.0 300 0.847 -32.8 400 0.819 -43.5 500 0.799 -53.7 600 0.771 -63.8 700 0.737 -73.2 800 0.722 -81.8 900 0.695 -90.1 1000 0.676 -97.9 1100 0.673 -103.8 1200 0.638 -112.0 1300 0.623 -118.3 1400 0.611 -124.3 1500 0.601 -129.7 1600 0 ...

Page 15

... S parameter S11 f(MHz) MAG ANG 100 0.725 -16.7 200 0.720 -33.0 300 0.708 -48.4 400 0.682 -63.0 500 0.657 -76.2 600 0.631 -88.4 700 0.604 -99.2 800 0.590 -108.4 900 0.573 -117.0 1000 0.563 -124.6 1100 0.558 -130.5 1200 0.544 -137.8 1300 0.538 -143.4 1400 0.534 -148.6 1500 0 ...

Page 16

... S parameter S11 f(MHz) MAG ANG 100 0.561 -25.7 200 0.555 -49.7 300 0.547 -70.6 400 0.534 -88.5 500 0.524 -103.2 600 0.515 -115.6 700 0.508 -126.0 800 0.504 -134.3 900 0.500 -141.8 1000 0.500 -148.0 1100 0.500 -153.1 1200 0.498 -158.6 1300 0.500 -163.0 1400 0 ...

Page 17

... A-A Section Ordering Information Part Name Quantity 2SC5975 10,000 Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00, Jul.06.2004, page Lead Material 0.0016 Cu Alloy C L ...

Page 18

Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...

Related keywords