2sc5975 Renesas Electronics Corporation., 2sc5975 Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/5/561/renesas_electronics_corporation__sml.jpg)
2sc5975
Manufacturer Part Number
2sc5975
Description
Silicon Npn Epitaxial High Frequency Low Noise Amplifier / Oscillator
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.2SC5975.pdf
(18 pages)
2SC5975
Main Characteristics
Rev.1.00, Jul.06.2004, page 3 of 17
200
150
100
200
180
160
140
120
100
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
80
60
40
20
50
0
1
0
0
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Collector Power Dissipation Curve
Emitter to Base Voltage V
Ambient Temperature
DC Current Transfer Ratio vs.
Emitter Input Capacitance vs.
Collector Current
Emitter to Base Voltage
50
Collector Current
2 V
Value on PCB
(FR-4 : 40 x 40 x 1.6 mm
V
CE
100
10
= 1 V
3 V
I
Double side)
C
150
Ta ( C)
I
f = 1 MHz
(mA)
C
EB
= 0
(V)
100
200
0.25
0.15
0.05
0.3
0.2
0.1
0.5
0.4
0.3
0.2
0.1
20
18
16
14
12
10
8
6
4
2
0
0
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
0
Collector to Emitter Voltage
Collector to Base Voltage V
Collector to Base Voltage V
200 A
Reverse Transfer Capacitance vs.
Collector Output Capacitance vs.
0.5
Typical Output Characteristics
Collector to Base Voltage
Collector to Base Voltage
1
IB = 20 A
180 A
1.5
160 A
140 A
120 A
100 A
80 A
60 A
40 A
2 2.5
Emitter grounding
f = 1 MHz
I
f = 1 MHz
E
3 3.5
= 0
V
CB
CB
CE
(V)
(V)
(V)
4