2n2920ahr STMicroelectronics, 2n2920ahr Datasheet - Page 3

• Manufacturer Part Number: 2n2920ahr
• Description: Hi-rel Npn Dual Matched Bipolar Transistor 60 V - 0.03 A
• Manufacturer: STMicroelectronics

2N2920AHR
2
Electrical characteristics
T
Table 5.
h
h
case
V
FE2-1
FE2-1
V
V
Δ⏐
Δ⏐
V
(BR)CEO
V
Symbol
CE(sat)
BE(sat)
V
V
h
(BR)CBO
(BR)EBO
I
I
I
= 25 °C unless otherwise specified
FE
BE2
BE2
CBO
CEO
EBO
V
V
I
f
Lk
/ h
/ h
T
BE1
BE1
(1)
⏐
⏐
FE2-2
FE2-2
(1)
(1)
(1)
-
-
Electrical characteristics
Collector-base cut-off
current (I
Collector cut-off
current (I
Emitter-base cut-off
current (I
Collector-base
breakdown voltage
(I
Collector-emitter
breakdown voltage
(I
Emitter-base
breakdown voltage
(I
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
DC current gain
DC current transfer
ratio comparison
DC current transfer
ratio comparison
Base-emitter voltage
differential
Base-emitter voltage
differential
Leakage current
between active
devices
Transition frequency
E
B
C
= 0)
= 0)
= 0)
Parameter
E
B
C
= 0)
= 0)
= 0)
Doc ID 15383 Rev 2
V
V
V
V
I
I
I
I
I
I
I
I
I
T
I
T
I
T
V
V
V
V
T
T
V = 50 V to E
V = 0 V to E
I
C
C
E
C
C
C
C
C
C
C
C
C
amb
amb
amb
amb
amb
CB
CB
CE
EB
CE
CE
CE
CE
= 10 µA
= 10 µA
= 10 mA
= 1 mA
= 1 mA
= 10 µA
= 100 µA
= 1 mA
= 10 µA
= 100 µA
= 100 µA
= 0.5 mA
= 5 V
= 45 V
= 45 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= -55 °C
= -55 °C to +25 °C
= -55 °C to +125 °C
= -55 °C to +25 °C
= +25 °C to +125 °C
Test conditions
1
, B
2
, B
1
I
I
B
B
V
V
V
V
V
V
T
I
I
I
I
, C
2
V
C
C
C
C
CE
CE
CE
CE
CE
CE
, C
C
= 0.1 mA
= 0.1 mA
CE
= 10 µA
= 100 µA
= 1 mA
= 100 µA
1
= 150 °C
2
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
= 5 V
Electrical characteristics
Min.
0.91
0.85
150
225
300
0.5
60
60
50
60
6
Typ. Max.
0.35
1.18
600
1.1
1.5
0.4
0.5
10
2
2
2
1
2
2
5
MHz
Unit
mV
mV
mV
mV
mV
nA
µA
nA
nA
µA
V
V
V
V
V
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