2n3019hr STMicroelectronics, 2n3019hr Datasheet - Page 3

• Manufacturer Part Number: 2n3019hr
• Description: Hi-rel Npn Bipolar Transistor 80 V - 1 A
• Manufacturer: STMicroelectronics

2N3019HR
2
Electrical characteristics
T
Table 4.
1. Pulsed duration = 300 µs, duty cycle ≤ 2 %
V
case
V
V
V
V
(BR)CEO
Symbol
t
CE(sat)
BE(sat)
on
(BR)CBO
h
(BR)EBO
C
t
C
I
I
C(CB)
FE
EBO
CES
NF
h
h
CBO
IBO
+ t
= 25 °C unless otherwise specified
fe
fe
(1)
off
(1)
(1)
(1)
Electrical characteristics
Collector cut-off
current (I
Emitter cut-off current
(I
Collector-base
breakdown voltage
(I
Collector-emitter
breakdown voltage
(I
Emitter-base
breakdown voltage
(I
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
DC current gain
Small signal current
gain
Small signal short
circuit forward current
transfer ratio
Output capacitance
(I
Input capacitance
(I
Noise figure
Collector- base
constant time
Pulse response
C
E
B
C
E
C
= 0)
= 0)
= 0)
= 0)
= 0)
= 0)
Parameter
E
= 0)
Doc ID 15384 Rev 2
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
T
V
f = 20 MHz
V
V
V
V
R
V
f = 79.8 MHz
V
C
C
E
C
C
C
C
C
C
C
C
C
amb
CB
CB
EB
CE
CE
CB
EB
CE
CE
CC
G
= 100 µA
= 30 mA
= 100 µA
= 150 mA
= 500 mA
= 150 mA
= 0.1 mA
= 10 mA
= 150 mA
= 500 mA
= 1 A
= 150 mA
= 1 kΩ Bandwidth = 200 Hz
= 5 V
= 0.5 V
= 90 V
= 90 V
= 10 V
= 5 V
= 10 V
= 10 V
= 10 V
= 20 V
= -65 °C
Test conditions
V
I
I
I
V
V
V
V
V
T
B
B
B
CE
see
amb
I
I
f = 1 MHz
f = 1 MHz
I
CE
CE
CE
CE
CE
C
C
C
= 15 mA
= 50 mA
= 15 mA
I
C
= 10 V
= 50 mA
= 1 mA
= 100 µA
= 10 V
= 10 V
= 10 V
= 10 V
= 10 V
= 10 mA
Figure 4
= 150 °C
Min.
Electrical characteristics
140
100
80
50
90
50
15
40
80
7
5
Typ.
Max.
200
300
200
400
400
0.2
0.5
1.1
10
10
10
20
12
60
30
4
Unit
nA
µA
nA
pF
pF
dB
ps
ns
V
V
V
V
V
V
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