2sc4703-t1 Renesas Electronics Corporation., 2sc4703-t1 Datasheet - Page 2

• Manufacturer Part Number: 2sc4703-t1
• Description: Npn Silicon Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
h
2
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Collector Capacitance
2nd Order Intermoduration Distortion
3rd Order Intermoduration Distortion
FE
Notes 1. Pulse measurement: PW
h
Marking
CLASSIFICATION
FE
Rank
Value
2. Collector to base capacitance when the emitter grounded
Parameter
50 to 100
SH
SH
Symbol
C
h
S
S
FE
I
80 to 160
I
ob
NF
IM
IM
CBO
EBO
f
21e
21e
T
350 s, Duty Cycle
Note 1
Note 2
2
3
SF
SF
2
2
A
V
V
V
V
V
V
V
V
I
V
f = 190
I
V
f = 2
= +25 C)
C
C
Data Sheet PU10339EJ01V1DS
CB
EB
CE
CE
CE
CE
CE
CB
O
O
= 50 mA,
= 50 mA,
= 105 dB V/75
= 105 dB V/75
= 20 V, I
= 2 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 10 V, I
= 5 V, I
= 5 V, I
190
90 MHz
125 to 250
C
C
C
C
C
E
Test Conditions
E
C
= 0 mA
= 50 mA
= 50 mA
= 50 mA, f = 1 GHz
= 50 mA, f = 1 GHz
= 0 mA, f = 1 MHz
200 MHz
= 0 mA
= 20 mA, f = 1 GHz
SE
SE
2%
,
,
V
V
V
V
CE
CE
CE
CE
= 5 V
= 10 V
= 5 V
= 10 V
MIN.
6.5
50
–
–
–
–
–
–
–
–
–
TYP.
6.0
8.3
8.5
2.3
1.5
55
63
76
81
–
–
–
MAX.
250
1.5
1.5
3.5
2.5
–
–
–
–
–
–
–
2SC4703
GHz
Unit
dBc
dBc
dB
dB
dB
pF
–
A
A