2sc4703-t1 Renesas Electronics Corporation., 2sc4703-t1 Datasheet - Page 3

• Manufacturer Part Number: 2sc4703-t1
• Description: Npn Silicon Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
2 500
2 000
1 500
1 000
1 000
1 800
500
100
500
100
400
0.1
10
50
10
0
1
0.2
0.1
Free Air
R
th (j-a)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
25
312.5˚C/W
Base to Emitter Voltage V
DC CURRENT GAIN vs.
0.4
COLLECTOR CURRENT
Ambient Temperature T
Collector Current I
1
50
0.6
Ceramic Substrate
16 cm
R
th (j-a)
75
10
2
62.5˚C/W
0.8
0.7 mm (t)
V
100
V
C
CE
CE
(mA)
A
A
= 10 V
100
= 10 V
BE
(˚C)
= +25 C)
1.0
(V)
5 V
125
5 V
Data Sheet PU10339EJ01V1DS
1 000
150
1.2
120
100
0.5
0.2
80
60
40
20
10
5
2
1
0
9
8
7
6
5
4
0.1
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
1
f = 1 GHz
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0.2 0.3 0.5
INSERTION POWER GAIN
2
vs. COLLECTOR CURRENT
Collector to Emitter Voltage V
2
Collector to Base Voltage V
Collector Current I
4
5 7 10
I
B
1
= 0.7 mA
6
2 3
20
8
C
(mA)
5
0.6 mA
10
50 70100
CB
V
CE
f = 1 MHz
CE
10
(V)
(V)
2SC4703
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
= 10 V
12
5 V
20 30
200
14
3