74LVC1G38GM,115 NXP Semiconductors, 74LVC1G38GM,115 Datasheet - Page 6

• Manufacturer Part Number: 74LVC1G38GM,115
• Description: IC 2-IN NAND GATE O-D 6-XSON
• Manufacturer: NXP Semiconductors
• Series: 74LVCr

Specifications of 74LVC1G38GM,115

• Number Of Circuits: 1
• Package / Case: 6-XSON (Micropak™), SOT-886
• Logic Type: NAND Gate with Open Drain
• Number Of Inputs: 2
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Product: NAND
• Logic Family: 74LVC
• Low Level Output Current: 32 mA
• Propagation Delay Time: 3 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 1.65 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Operating Temperature Range: - 40 C to + 125 C
• Output Current: 50 mA
• Output Voltage: 5.5 V
• Power Dissipation: 300 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4402-2; 74LVC1G38GM-G; 74LVC1G38GM-G; 935277194115

NXP Semiconductors
Table 7.
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
[1]
11. Dynamic characteristics
Table 8.
Voltages are referenced to GND (ground = 0 V). For test circuit see
[1]
[2]
[3]
74LVC1G38
Product data sheet
Symbol Parameter
V
I
I
I
I
ΔI
Symbol Parameter
t
C
I
OZ
OFF
CC
pd
OL
PD
CC
All typical values are measured at V
Typical values are measured at T
t
C
P
f
f
C
V
N = number of inputs switching;
∑(C
pd
i
o
D
CC
PD
= input frequency in MHz;
L
= output frequency in MHz;
is the same as t
= output load capacitance in pF;
= C
L
is used to determine the dynamic power dissipation (P
= supply voltage in V;
× V
LOW-level output voltage V
input leakage current
OFF-state output current
power-off leakage current V
supply current
additional supply current
propagation delay
power dissipation
capacitance
PD
Static characteristics
Dynamic characteristics
CC
× V
2
× f
CC
o
2
) = sum of outputs.
× f
PZL
i
× N + ∑(C
and t
PLZ
Conditions
A, B to Y; see
V
V
.
L
CC
I
× V
V
V
V
V
V
amb
= GND to V
…continued
CC
CC
CC
CC
CC
CC
CC
= 3.3 V;
= 25 °C and V
Conditions
V
V
V
V
V
V
V
V
2
= 1.65 V to 1.95 V
= 2.3 V to 2.7 V
= 2.7 V
= 3.0 V to 3.6 V
= 4.5 V to 5.5 V
= 3.3 V and T
I
I
CC
I
CC
I
I
CC
I
CC
× f
I
I
I
I
I
I
= V
= 5.5 V or GND;
= V
or V
= 5.5 V or GND;
= V
O
O
O
O
O
O
o
All information provided in this document is subject to legal disclaimers.
= 0 V to 5.5 V
= 5.5 V
= 1.65 V to 5.5 V; I
= 2.3 V to 5.5 V; per pin
= 100 μA; V
= 4 mA; V
= 8 mA; V
= 12 mA; V
= 24 mA; V
= 32 mA; V
) where:
IH
IH
CC
O
CC
Figure 7
or V
or V
= 5.5 V; V
− 0.6 V; I
CC
Rev. 4 — 5 October 2010
IL
IL
amb
; V
= 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
CC
CC
CC
CC
CC
= 25 °C.
CC
O
= 1.65 V
= 2.3 V
O
= V
CC
D
= 2.7 V
= 3.0 V
= 4.5 V
= 1.65 V to 5.5 V
= 0 A;
in μW).
= 0 V
CC
[2]
[3]
O
or GND;
= 0 A
Min
Figure
1.0
0.5
0.5
0.5
0.5
-
−40 °C to +85 °C
8.
Typ
3.0
1.8
2.5
2.3
1.5
6
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
Max
10.0
6.0
5.0
4.5
3.9
2-input NAND gate; open drain
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
−40 °C to +125 °C
74LVC1G38
Min
1.0
0.5
0.5
0.5
0.5
-
© NXP B.V. 2010. All rights reserved.
Max
-
0.1
0.70
0.45
0.60
0.80
0.80
±100
±200
±200
200
5000
Max
12.5
7.5
6.5
5.7
4.9
-
Unit
V
V
V
V
V
V
μA
μA
μA
μA
μA
Unit
ns
ns
ns
ns
ns
pF
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