2sd1418dctr-e Renesas Electronics Corporation., 2sd1418dctr-e Datasheet - Page 2

• Manufacturer Part Number: 2sd1418dctr-e
• Description: Silicon Npn Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SD1418
Electrical Characteristics
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Notes: 1. The 2SD1418 is grouped by h
h
Rev.2.00 Aug 10, 2005 page 2 of 5
FE1
Mark
2. Pulse test
60 to 120
Item
DA
100 to 200
DB
FE1
Symbol
V
V
V
V
h
160 to 320
(BR)CBO
(BR)CEO
(BR)EBO
Cob
I
h
CE(sat)
FE1
V
as follows.
CBO
FE2
f
BE
T
*
1
DC
Min
120
80
60
30
—
—
—
—
—
5
Typ
140
12
—
—
—
—
—
—
—
—
Max
320
1.5
10
—
—
—
—
—
—
1
MHz
Unit
pF
V
V
V
V
V
A
I
I
I
V
V
V
I
V
V
V
C
C
E
C
CB
EB
CE
CE
CE
CB
= 500 mA, I
= 10 A, I
= 10 A, I
= 1 mA, R
= 100 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 10 V, I
Test conditions
C
C
C
C
C
E
BE
E
= 150 mA*
= 500 mA*
= 150 mA*
= 150 mA*
= 0
= 0
E
B
= 0, f = 1 MHz
=
= 0
= 50 mA*
(Ta = 25°C)
2
2
2
2
2