2sd1418dctr-e Renesas Electronics Corporation., 2sd1418dctr-e Datasheet - Page 3

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2sd1418dctr-e

Manufacturer Part Number
2sd1418dctr-e
Description
Silicon Npn Epitaxial
Manufacturer
Renesas Electronics Corporation.
Datasheet
2SD1418
Main Characteristics
Rev.2.00 Aug 10, 2005 page 3 of 5
500
200
100
1.2
0.8
0.4
1.2
1.0
0.8
0.6
0.4
0.2
50
20
10
0
5
2
1
0
Saturation Voltage vs. Collector Current
Maximum Collector Dissipation Curve
0
Base to Emitter Voltage V
1
Typical Transfer Characteristics
I
Pulse
C
Ambient Temperature Ta (°C)
V
V
= 10 I
CE
CE(sat)
0.2
Collector Current I
3
= 5 V
B
50
0.4
10
30
0.6
100
100
C
0.8
BE
(mA)
300
(V)
1.0
150
1,000
0.6
0.5
0.4
0.3
0.2
0.1
0
DC Current Transfer Ratio vs. Collector Current
Gain Bandwidth Product vs. Collector Current
240
200
160
120
300
250
200
150
100
1.0
0.8
0.6
0.4
0.2
80
40
50
0
0
0
10
Collector to Emitter Voltage V
1
V
V
Pulse
CE
Typical Output Characteristics
CE
Collector Current I
35
25
Collector Current I
30
= 5 V
3
= 5 V
2
20
30
15
10
10
4
5
100
30
2
6
1
100
C
C
300
(mA)
(mA)
8
0.5 mA
I
CE
B
300
= 0
(V)
10
1,000
1,000

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