2sb1241 ROHM Co. Ltd., 2sb1241 Datasheet

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2sb1241

Manufacturer Part Number
2sb1241
Description
Power Transistor
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
Power Transistor (−80V, −1A)
2SB1260 / 2SB1181 / 2SB1241
1) Hight breakdown voltage and high current.
2) Good h
3) Low V
4) Complements the 2SD1898 / 2SD1863 /
Epitaxial planar type
PNP silicon transistor
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Features
Structure
Absolute maximum ratings (Ta=25°C)
Collector power
dissipation
1 2SB1260 : Pw=20ms duty=1/2
2 2SB1260 : When mounted on a 40
3 2SB1241 : Printed circuit board, 1.7mm thick, collector copper plating 100mm
BV
2SD1733.
2SB1241 : Single pulse, Pw=100ms
CEO
= −80V, I
CE(sat)
FE
linearty.
Parameter
.
2SB1260
2SB1241, 2SB1181
2SB1181
C
= −1A
×
40
×
0.7 mm ceramic board.
Symbol
V
V
V
Tstg
I
P
Tj
CBO
CEO
EBO
I
CP
C
C
0.65Max.
External dimensions (Unit : mm)
Denotes h
ROHM : MPT3
EIAJ : SC-62
2SB1260
2SB1241
−55 to 150
(1)
Limits
ROHM : ATV
−80
−80
150
0.5
−5
−1
−2
10
1.5±0.1
0.4±0.1
2
1
2
2.54 2.54
6.8±0.2
(2)
or larger.
FE
(1)
(3)
∗1
∗2
∗3
1.6±0.1
(2)
3.0±0.2
4.5
0.5±0.1
2SB1260 / 2SB1181 / 2SB1241
0.5±0.1
+0.2
−0.1
Abbreviated
symbol: BE
(3)
W (Tc=25 °C )
0.4±0.1
1.5±0.1
A (Pulse)
A (DC)
1.05
Unit
°C
°C
W
V
V
V
2.5±0.2
(1) Emitter
(2) Collector
(3) Base
1.5
+0.2
−0.1
0.45±0.1
(1) Base
(2) Collector
(3) Emitter
0.4
+0.1
−0.05
2SB1181
0.75
2.3
ROHM : CPT3
EIAJ : SC-63
±
0.9
(1)
0.2
6.5
5.1
+
(2)
±
0.2
0.1
0.2
2.3
(3)
±
0.2
0.65
Rev.C
C0.5
±
0.1
(1) Base
(2) Collector
(3) Emitter
0.5
1.0
2.3
0.55
+
±
±
0.2
0.1
0.1
0.2
±
0.1
1/3

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2sb1241 Summary of contents

Page 1

... Storage temperature ∗ 1 2SB1260 : Pw=20ms duty=1/2 2SB1241 : Single pulse, Pw=100ms ∗ × × 2 2SB1260 : When mounted 0.7 mm ceramic board. ∗ 3 2SB1241 : Printed circuit board, 1.7mm thick, collector copper plating 100mm 2SB1260 / 2SB1181 / 2SB1241 External dimensions (Unit : mm) 2SB1260 +0.2 4.5 −0.1 1.5 1.6±0.1 (1) (2) (3) 0.4± ...

Page 2

... CE −100 −10 −1 −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 0 (V) BASE TO EMITTER VOLTAGE : V BE Fig.1 Grounded emitter propagation characteristics 2SB1260 / 2SB1181 / 2SB1241 Symbol Min. Typ. Max. −80 − − BV CBO −80 − − BV CEO −5 − − BV EBO − ...

Page 3

... COLLECTOR TO EMITTER VOLTAGE : V Fig.10 Safe operating area (2SB1181) 2SB1260 / 2SB1181 / 2SB1241 1000 Ta = 25°C = −5V V 500 CE 200 100 100 200 ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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