2sb1241 ROHM Co. Ltd., 2sb1241 Datasheet - Page 2

• Manufacturer Part Number: 2sb1241
• Description: Power Transistor
• Manufacturer: ROHM Co. Ltd.

Transistors
h
Type
2SB1260
2SB1241
2SB1181
FE
−1000
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Electrical characteristics (Ta=25°C)
Transition frequency
Packaging specifications and h
Electrical characteristic curves
Fig.1
−100
−0.1
−10
values are classified as follows :
−1
Item
h
0
FE
BASE TO EMITTER VOLTAGE : V
−0.2 −0.4
Grounded emitter propagation
characteristics
h
PQR
QR
PQR
82 to 180
Parameter
FE
−0.6
P
−0.8
Package
Code
Basic ordering
unit (pieces)
2SB1181
2SB1260
2SB1260, 2SB1181
2SB1241
2SB1181, 2SB1241
−1.0
120 to 270
−1.2
V
Ta = 25°C
Q
CE
−1.4
= −5V
BE
(V)
−1.6
FE
180 to 390
2500
R
TL
Symbol
−
−
−1.0
−0.8
−0.6
−0.4
−0.2
BV
BV
BV
V
Cob
COLLECTOR TO EMITTER VOLTAGE : V
I
I
CE(sat)
h
0
CBO
EBO
f
0
Fig.2
FE
CBO
CEO
T
EBO
−0.2
Taping
−0.4
2500
TV2
Min.
Grounded emitter output
characteristics
−80
−80
120
−
−
−5
82
−0.6
−
−
−
−
−
−
−0.8
−1.0
Typ.
100
20
25
−
−
−
−
−
−
−
−
T100
1000
−1.2
−
−
2SB1260 / 2SB1181 / 2SB1241
−1.4
Max.
−0.4
390
390
−1
−1
−1.6
−
−
−
−
−
−
Ta=25°C
−4.5mA
−3.5mA
−2.5mA
−1.5mA
−0.5mA
I
B
=0mA
−4mA
−3mA
−2mA
−1mA
−1.8
CE
−2.0
MHz
Unit
µ A
µ A
(V)
pF
pF
V
V
V
V
−
−
1000
I
I
I
V
V
I
V
V
V
I
f=1MHz
500
200
100
C
C
E
C
E
50
20
10
= −50 µ A
CB
EB
CE
CE
CB
=0A
= −50 µ A
= −1mA
/I
−1 −2
B
= −60V
= −4V
= −3V, I
= −10V, I
= −10V
= −500mA/ −50mA
Fig.3
COLLECTOR CURRENT : I
−5 −10 −20 −50 −100 −200 −500
C
Conditions
= −0.1A
E
=50mA, f=100MHz
DC current gain vs.
collector current
Rev.C
V
CE
C
−1V
Ta=25°C
(mA)
= −3V
−1000
−2000
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