let9002 STMicroelectronics, let9002 Datasheet

let9002

Manufacturer Part Number

let9002

Description

Rf Power Transistors Ldmos Enhanced Technology In Plastic Package

Manufacturer

STMicroelectronics

Datasheet

1.LET9002.pdf (4 pages)

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BOSTOCK HK LIMITED

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N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• P

• NEW LEADLESS PLASTIC PACKAGE

• ESD PROTECTION

• SUPPLIED IN TAPE & REEL OF 3K UNITS

DESCRIPTION

The LET9002 is a common source N-Channel, en-

hancement-mode lateral Field-Effect RF power

transistor designed for broadband commercial and

industrial applications at frequencies up to 1000

MHz. The LET9002 is designed for high gain and

broadband performance operating in common

source mode at 26 V. LET9002 boasts the

excellent gain, linearity and reliability of ST’s latest

LDMOS technology mounted in the innovative

leadless SMD plastic package, PowerFLAT™.

It is ideal for digital cellular BTS applications

requiring high linearity.

ABSOLUTE MAXIMUM RATINGS (T

THERMAL DATA

April, 15 2003

Symbol

(BR)DSS

OUT

th(j-c)

DISS

STG

= 2 W with 17 dB gain @ 960 MHz / 26 V

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation (@ Tc = 70°C)

Max. Operating Junction Temperature

Storage Temperature

Junction -Case Thermal Resistance

Ldmos Enhanced Technology in Plastic Package

Parameter

CASE

= 25

RF POWER TRANSISTORS

ORDER CODE

LET9002

PowerFLAT

PIN CONNECTION

TOP VIEW

-65 to +150

-0.5 to +15

Value

0.25

150

™

(5x5)

LET9002

TARGET DATA

BRANDING

9002

°C/W

Unit

°C

1/4

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