let9060s STMicroelectronics, let9060s Datasheet

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let9060s

Manufacturer Part Number
let9060s
Description
Rf Power Transistors Ldmos Enhanced Technology In Plastic Package
Manufacturer
STMicroelectronics
Datasheet

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Part Number:
LET9060S
Manufacturer:
ST
0
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
• NEW RF PLASTIC PACKAGE
• HIGH GAIN
• ESD PROTECTION
• AVAILABLE IN TAPE & REEL with TR SUFFIX
DESCRIPTION
The LET9060S is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 1 GHz. LET9060S boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. LET9060S’s
superior linearity performance makes it an ideal
solution for base station applications.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially
excellent RF performances and ease of assembly.
ABSOLUTE MAXIMUM RATINGS (T
THERMAL DATA
March, 25 2003
V
Symbol
R
(BR)DSS
P
OUT
T
V
th(j-c)
DISS
STG
I
Tj
GS
D
= 60 W with 17 dB gain @ 945 MHz / 26V
optmized for RF needs and offers
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Max. Operating Junction Temperature
Storage Temperature
Junction -Case Thermal Resistance
Ldmos Enhanced Technology in Plastic Package
Parameter
CASE
= 25
°
C)
www.st.com/rf/ (look for application note AN1294)
RF POWER TRANSISTORS
Mounting recommendations are available in
ORDER CODE
LET9060S
GATE
PIN CONNECTION
PowerSO-10RF
(straight lead)
-65 to +150
-0.5 to +15
Value
170
165
0.7
65
7
LET9060S
PRELIMINARY DATA
SOURCE
DRAIN
BRANDING
LET9060S
°C/W
Unit
°C
°C
W
V
V
A
1/10

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let9060s Summary of contents

Page 1

... It is designed for high gain, broad band commercial and industrial applications. It operates common source mode at frequencies GHz. LET9060S boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET9060S’s superior linearity performance makes it an ideal solution for base station applications ...

Page 2

... LET9060S ELECTRICAL SPECIFICATION (T STATIC Symbol (BR)DSS DSS GSS GS( DS(ON ISS OSS RSS GS DYNAMIC ( f = 945 MHz ) Symbol 250 mA ...

Page 3

... ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model MOISTURE SENSITIVITY LEVEL Test Methodology J-STD-020B Typical Drain Load Impedance G Zin 0. 0.05 0. 0.6 0 1.4 0 1.3 0 0.8 0 1.6 LET9060S 2 0.1 2 0.1 1 0.2 1 0.5 1 0.3 1 1.0 Class 2 M3 Rating MSL 3 3/10 ...

Page 4

... LET9060S TYPICAL PERFORMANCE Power Gain Vs Output Power 1000 Ciss 100 Coss 10 Crss Vds (V) Efficiency Vs Output Power Vdd = 26 V Idq = 250 Pout (W) 4/10 Power Gain 1MHz 19 18 ...

Page 5

... Input Return Loss Vs Frequency -12 -16 -20 910 920 930 940 950 f (MHz) Efficiency Vs Frequency 910 920 960 970 Vdd = 26 V Idq = 250 mA Pout = 60 W 960 970 LET9060S Vdd = 26 V Idq = 250 mA Pout = 60 W 930 940 950 960 970 f (MHz) 5/10 ...

Page 6

... LET9060S TEST CIRCUIT SCHEMATIC TEST CIRCUIT COMPONENT PART LIST COMPONENT C1, C8, C9, C13 C2, C7 C3, C4, C5, C6 C10 C11, C15 C12 C14 C16 FB1, FB2 L1, L2 6/10 DESCRIPTION 47pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.8-8.0pF GIGA TRIM VARIABLE CAPACITOR 7 ...

Page 7

... TEST CIRCUIT TEST CIRCUIT PHOTOMASTER 6.4 inches LET9060S 7/10 ...

Page 8

... LET9060S MIN. Ao 17.9 Bo 9.7 Ko 4.15 K1 3.6 F 11.4 P1 23.9 W 23.7 8/10 TAPE & REEL DIMENSIONS mm TYP. 18.0 9.8 4.25 3.7 11.5 24.0 24.0 MAX 18.1 9.9 4.35 3.8 11.6 24.1 24.3 ...

Page 9

... CRITICAL DIMENSIONS: - Overall width (L) LET9060S Inch TYP. MAX 0.065 0.068 0.137 0.142 0.05 0.054 0.007 0.009 0.007 0.217 0.221 0.01 0.012 0.374 0.377 0.295 0.298 0.606 0.615 0.37 0.375 0.292 0.294 0.24 0.247 0.019 0.047 ...

Page 10

... LET9060S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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