let9130 STMicroelectronics, let9130 Datasheet
let9130
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let9130 Summary of contents
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... THERMAL DATA R Junction -Case Thermal Resistance th(j-c) February, 6 2003 RF POWER TRANSISTORS Ldmos Enhanced Technology ORDER CODE LET9130 ° CASE Parameter LET9130 PRELIMINARY DATA M265 epoxy sealed BRANDING LET9130 PIN CONNECTION Drain 2. Source 3. Gate Value Unit 65 V -0 217 W 200 ° ...
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... LET9130 ELECTRICAL SPECIFICATION (T STATIC (Per Section) Symbol (BR)DSS DSS DSS GSS TBD GS( DS(ON ...
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... Vdd = 940 MHz Idq = 150 200 0 Vdd = 30 V Vdd = 28 V Vdd = 26 V 150 200 LET9130 Vdd = 940 MHz Idq = 100 150 200 Pout ( ° ° ° 940 MHz Idq = 1 A Vdd=28V 50 100 ...
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... LET9130 TYPICAL PERFORMANCE (BROADBAND) Gain-Efficiency Vs Frequency 910 920 930 940 950 f (MHz) EVM-Efficiency Vs Output Power 12 Vdd = 28 V Idq = 600 960 MHz Pout (W) 4/6 Return Loss Vs Frequency 80 -5 -10 70 -15 60 -20 50 -25 40 -30 Pout = 130 W ...
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... DIM. MIN. TYP. A 12.57 B 4.32 C 9.65 D 19.61 E 33.91 F 0.08 G 0.89 H 1.45 I 3.18 J 9.27 K 27.69 L 3.00 Inch MAX MIN. TYP. 12.83 .495 5.33 .170 9.91 .380 20.02 .772 34.16 1.335 0.15 .003 1.14 .035 1.70 .057 4.32 .125 9.53 .365 28.19 1.090 3.51 .118 LET9130 MAX .505 .210 .390 .788 1.345 .006 .045 .067 .170 .375 1.110 .138 Ref. 1023153 5/6 ...
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... LET9130 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...