ne71300n Renesas Electronics Corporation., ne71300n Datasheet

ne71300n

Manufacturer Part Number

ne71300n

Description

Low Noise L To K-band Gaas Mesfet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.NE71300N.pdf (8 pages)

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FEATURES

• LOW NOISE FIGURE

• HIGH ASSOCIATED GAIN

• L

• EPITAXIAL TECHNOLOGY

• LOW PHASE NOISE

DESCRIPTION

The NE71300 features a low noise figure and high associ-

ated gain through K-band by employing a recessed 0.3 micron

gate and triple epitaxial technology. The active area of the

chip is covered with Si0

well as surface stability. This device is suitable for both

amplifier and oscillator applications in the consumer and

industrial markets.

NEC's stringent quality assurance and test procedures en-

sure the highest reliability and performance.

ELECTRICAL CHARACTERISTICS

Notes:

1. RF performance is determined by packaging and testing 10 samples per wafer; wafer rejection criteria for standard devices is 2 rejects for 10

2. Chip mounted on infinite heat sink.

SYMBOLS

TH (CH-C) 2

NF = 1.6 dB TYP at f = 12 GHz

samples.

GSO

DSS

OPT 1

1dB

A 1

= 0.3 m, W

= 9.5 dB TYP at f = 12 GHz

Optimum Noise Figure, V

Associated Gain, V

Output Power at 1 dB Compression, V

Saturated Drain Current, V

Pinch-Off Voltage, V

Transconductance, V

Gate to Source Leakage Current at V

Thermal Resistance (Channel to Case)

= 280 m

and Si

PARAMETERS AND CONDITIONS

PACKAGE OUTLINE

= 3 V, I

L TO K-BAND GaAs MESFET

PART NUMBER

for scratch protection as

f =12 GHz

= 3 V, I

f = 4 GHz

f = 12 GHz

= 3 V, I

f = 4 GHz

f = 12 GHz

= 3 V, I

= 3 V, V

= 10 mA,

= 0.1 mA

= 10 mA

= 10 mA,

= -5 V

= 0

= 3 V, I

= 25 C)

s = 30 mA,

LOW NOISE

1.5

0.5

2.5

UNITS

dBm

C/W

California Eastern Laboratories

NOISE FIGURE & ASSOCIATED GAIN

Frequency, f (GHz)

vs. FREQUENCY

= 3 V, I

11.5

MIN

-3.5

8.5

= 10 mA

NE71300

00 (CHIP)

NE71300

TYP

14.0

14.5

-1.1

0.6

1.6

9.5

1.0

MAX

-0.5

120

190

0.7

1.8

Related parts for ne71300n

ne71300n Summary of contents

Page 1

L TO K-BAND GaAs MESFET FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP GHz • HIGH ASSOCIATED GAIN G = 9.5 dB TYP GHz A • 0.3 m, ...

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DS V Gate to Drain Voltage GD V Gate to Source Voltage GS I Drain Current Input (CW Channel Temperature CH T Storage Temperature STG ...

Page 3

TYPICAL SCATTERING PARAMETERS GHz GHz 1 0.5 GHz -.2 -.4 -2 -.6 -1.5 -.8 -1 NE71300 V = ...

Page 4

TYPICAL SCATTERING PARAMETERS GHz GHz 1 -.2 -.4 -2 -.6 -1.5 -.8 -1 NE71300 ...

Page 5

TYPICAL SCATTERING PARAMETERS GHz GHz 1 -.2 -.4 -.6 -1.5 -.8 -1 NE71300 ...

Page 6

... When K 1, MAG is undefined and MSG values are used. MSG = | MAG = Maximum Available Gain MSG = Maximum Stable Gain ORDERING INFORMATION PART NUMBER I SELECTION (mA) DSS NE71300 20 to 120 (Standard) NE71300N NE71300M NE71300L MAG ANG MAG ANG 2.874 172.9 0.012 83 ...

Page 7

NE71300(L) NONLINEAR MODEL SCHEMATIC GATE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters VTO -2.04 RG VTOSC 0 RD ALPHA 2.5 RS BETA 0.03145 RGMET GAMMA 0.115 KF GAMMADC 0. 1.7 TNOM DELTA 0.42 XTI VBI ...

Page 8

NE71300 NE71300(N) NONLINEAR MODEL SCHEMATIC GATE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters VTO -1.04 RG VTOSC 0 RD ALPHA 4.5 RS BETA 0.0409 RGMET GAMMA 0.082 KF GAMMADC 0. 1.9 TNOM DELTA 0.42 XTI VBI 1 EG ...

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