ne71300n Renesas Electronics Corporation., ne71300n Datasheet - Page 2

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ne71300n

Manufacturer Part Number
ne71300n
Description
Low Noise L To K-band Gaas Mesfet
Manufacturer
Renesas Electronics Corporation.
Datasheet
ABSOLUTE MAXIMUM RATINGS
SYMBOLS
Notes:
1. Operation in excess of any one of these parameters may result in
2. With chip mounted on a copper heat sink.
TYPICAL PERFORMANCE CURVES
T
permanent damage.
V
V
V
T
P
P
I
STG
DS
DS
GD
GS
CH
T 2
IN
400
300
200
100
50
40
30
20
10
0
0
Drain to Source Voltage
Gate to Drain Voltage
Gate to Source Voltage
Drain Current
RF Input (CW)
Channel Temperature
Storage Temperature
Total Power Dissipation
-2.0
PARAMETERS
Gate to Source Voltage, V
GATE TO SOURCE VOLTAGE
Ambient Temperature, T
POWER DERATING CURVE
DRAIN CURRENT vs.
50
100
-1.0
UNITS
dBm
150
mW
mA
A
GS
V
V
V
C
C
( C)
V
DS
(V)
= 3 V
1
-65 to +175
200
RATINGS
(T
0
I
+15
175
A
400
DSS
-6
-5
5
(T
= 25 C)
A
= 25 C)
40
30
20
10
0
1
DC PERFORMANCE
Drain Voltage, V
2
3
DS
(V)
4
V
-0.2 V
-0.4 V
-0.6 V
GS
= 0 V
5

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