std13003-1 STMicroelectronics, std13003-1 Datasheet - Page 2

• Manufacturer Part Number: std13003-1
• Description: High Voltage Fast-switching Npn Power Transistor
• Manufacturer: STMicroelectronics

STD13003
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
2/8
V
Pulsed: Pulse duration = 300 s, duty cycle = 1.5 %
V
Symbol
V
R
R
CEO(sus)
BV
CE(sat)
BE(sat)
thj-case
h
thj-amb
I
CEV
FE
t
t
t
t
EBO
s
s
r
f
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Collector Cut-off
Current (V
Emitter-Base
Breakdown Voltage
(I
Collector-Emitter
Sustaining Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
INDUCTIVE LOAD
Storage Time
C
B
= 0)
= 0)
Parameter
BE
= -1.5V)
V
V
I
I
L = 25 mH
I
I
I
I
I
I
Group A
Group B
I
I
I
T
I
V
V
E
C
C
C
C
C
C
C
C
C
B1
C
p
CE
CE
BE
clamp
= 25 s
= 10 mA
= 10 mA
= 0.5 A
= 1 A
= 1.5 A
= 0.5 A
= 1 A
= 0.5 A
= 1 A
= 1 A
= 1 A
= 0.2 A
= -5 V
= 700V
= 700V
case
= 300 V
= 25
Test Conditions
o
C unless otherwise specified)
T
I
I
I
V
I
I
V
V
I
I
j
L = 50 mH
B
B
B
B
B
B1
B2
CE
CE
CC
= 125
= 0.1 A
= 0.5 A
= 0.1 A
= 0.25 A
= 0.25 A
= -0.2 A
= 0.2 A
= 2 V
= 2 V
= 125 V
Max
Max
o
C
Min.
400
15
9
8
5
Typ.
6.25
100
0.8
Max.
0.5
1.2
0.7
18
20
35
25
1
5
1
3
1
1
4
o
o
Unit
mA
mA
C/W
C/W
V
V
V
V
V
V
V
s
s
s
s