std1nc60 STMicroelectronics, std1nc60 Datasheet

no-image

std1nc60

Manufacturer Part Number
std1nc60
Description
N-channel 600v - 7ohm - 1.4a - Dpak/ipak Powermesh??ii Mosfet
Manufacturer
STMicroelectronics
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD1NC60
Manufacturer:
ST
0
Part Number:
std1nc60-1
Manufacturer:
ST
0
Part Number:
std1nc60-1
Manufacturer:
ST
Quantity:
20 000
Part Number:
std1nc60T4
Manufacturer:
ST
0
Part Number:
std1nc60Z-1
Manufacturer:
ST
0
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
.
December 2000
STD1NC60
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
Symbol
I
V
DM
P
dv/dt
V
V
T
DGR
TOT
I
I
T
stg
DS
GS
D
D
TYPE
(1)
j
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 7
600 V
V
II is the evolution of the first
DSS
R
< 8
N-CHANNEL 600V - 7 - 1.4A - DPAK/IPAK
DS(on)
C
™.
GS
Parameter
= 25° C
GS
= 20 k )
The layout re-
= 0)
C
C
= 25°C
= 100° C
1.4 A
I
D
(1)I
SD
1.4A, di/dt 100A/µs, V
INTERNAL SCHEMATIC DIAGRAM
PowerMesh™II MOSFET
TO-251
IPAK
–65 to 150
Value
DD
0.28
600
600
±30
150
1.4
0.9
5.6
3.5
35
1
2
STD1NC60
V
(BR)DSS
3
, T
TO-252
j
DPAK
T
JMAX
1
W/°C
Unit
V/ns
°C
°C
W
V
V
V
A
A
A
3
1/9

Related parts for std1nc60

std1nc60 Summary of contents

Page 1

... December 2000 PowerMesh™II MOSFET I D 1.4 A TO-251 The layout re- INTERNAL SCHEMATIC DIAGRAM Parameter = 25° 100° 25° C (1)I 1.4A, di/dt 100A/µ STD1NC60 IPAK DPAK TO-252 Value Unit 600 600 ±30 1.4 0.9 5.6 35 0.28 W/°C 3.5 V/ns –65 to 150 150 ...

Page 2

... STD1NC60 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthj-sink Thermal Resistance case-sink Typ T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting °C, I ...

Page 3

... 4 10V G GS (see test circuit, Figure 5) Test Conditions Min 1 1.4 A, di/dt = 100A/µ 100V 150° (see test circuit, Figure 5) Thermal Impedance STD1NC60 Typ. Max. Unit 8.5 11.5 nC 2.8 nC 2.8 nC Typ. Max. Unit Typ ...

Page 4

... STD1NC60 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/9 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STD1NC60 5/9 ...

Page 6

... STD1NC60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... L1 0 inch MAX. MIN. TYP. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.012 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 0.626 9.4 0.354 1.2 0.031 1 0.031 STD1NC60 MAX. 0.094 0.043 0.051 0.031 0.212 0.033 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 0068771-E 7/9 ...

Page 8

... STD1NC60 TO-252 (DPAK) MECHANICAL DATA DIM. MIN. A 2.20 A1 0.90 A2 0.03 B 0.64 B2 5.20 C 0.45 C2 0.48 D 6.00 E 6.40 G 4. 8/9 mm TYP. MAX. MIN. 2.40 0.087 1.10 0.035 0.23 0.001 0.90 0.025 5.40 0.204 0.60 0.018 0.60 0.019 6.20 0.236 6.60 0.252 4.60 0.173 10.10 0.368 0.8 1.00 0.024 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 ...

Page 9

... The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com STD1NC60 9/9 ...

Related keywords