std17n05 STMicroelectronics, std17n05 Datasheet

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std17n05

Manufacturer Part Number
std17n05
Description
N - Channel Enhancement Mode Power Mos Transistor
Manufacturer
STMicroelectronics
Datasheet

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APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
December 1996
STD17N05
STD17N06
Symbol
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175
APPLICATION ORIENTED
CHARACTERIZATION
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
I
V
D M
V
V
P
T
DG R
I
I
T
stg
D S
GS
D
D
tot
TYPE
( )
j
o
C OPERATING TEMPERATURE
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
DS(on)
V
50 V
60 V
= 0.06
DSS
< 0.085
< 0.085
Parameter
R
DS( on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
17 A
17 A
= 25
= 100
I
D
o
C
o
C
o
C
POWER MOS TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
STD17N05
(Suffix ”-1”)
TO-251
IPAK
50
50
-65 to 175
Value
1
0.37
175
17
12
68
55
20
2
3
STD17N06
STD17N05
STD17N06
60
60
(Suffix ”T4”)
TO-252
DPAK
1
W/
Unit
3
o
o
W
V
V
V
A
A
A
C
C
o
1/10
C

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std17n05 Summary of contents

Page 1

... IPAK TO-251 (Suffix ”-1”) INTERNAL SCHEMATIC DIAGRAM Value STD17N05 100 0.37 -65 to 175 175 STD17N05 STD17N06 DPAK TO-252 (Suffix ”T4”) Unit STD17N06 1/10 ...

Page 2

... Avalanche Current, Repetitive or Not-Repetitive 100 C, pulse width limited ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter V Drain-source I = 250 A ( BR)DSS D Breakdown Voltage for STD17N05 for STD17N06 I Zero Gate Voltage Drain Current ( Gate-body Leakage Current ( ...

Page 3

... D GS Test Conditions Min Test Conditions Min di/dt = 100 150 C j Thermal Impedance STD17N05/STD17N06 Typ. Max. Unit 120 170 ns 250 Typ. Max. Unit ...

Page 4

... STD17N05/STD17N06 Derating Curve Transfer Characteristics Static Drain-source On Resistance 4/10 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage ...

Page 5

... Capacitance Variations Normalized On Resistance vs Temperature Turn-off Drain-source Voltage Slope STD17N05/STD17N06 Normalized Gate Threshold Voltage vs Temperature Turn-on Current Slope Cross-over Time 5/10 ...

Page 6

... STD17N05/STD17N06 Switching Safe Operating Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuits 6/10 Accidental Overload Area Fig. 2: Unclamped Inductive Waveforms ...

Page 7

... Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STD17N05/STD17N06 Fig. 4: Gate Charge Test Circuit 7/10 ...

Page 8

... STD17N05/STD17N06 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 0.8 L2 0.8 L2 8/10 inch MAX. MIN. TYP. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.012 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 0.626 9.4 0.354 1.2 0.031 1 0.031 MAX. 0.094 ...

Page 9

... TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.2 A1 0.9 A2 0.03 B 0.64 B2 5.2 C 0. 6.4 G 4.4 H 9.35 L2 0.8 L4 0.6 H DETAIL ”A” STD17N05/STD17N06 inch MAX. MIN. TYP. 2.4 0.086 1.1 0.035 0.23 0.001 0.9 0.025 5.4 0.204 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 10.1 0.368 0.031 1 0.023 DETAIL ”A” MAX. 0.094 0.043 0.009 0.035 ...

Page 10

... STD17N05/STD17N06 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequ ences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...

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