std3n30l STMicroelectronics, std3n30l Datasheet - Page 3

• Manufacturer Part Number: std3n30l
• Description: N - Channel Enhancement Mode Power Mos Transistor
• Manufacturer: STMicroelectronics

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Pulse width limited by safe operating area
Safe Operating Area
Symbol
Symbol
Symbol
(di/dt)
V
I
t
SDM
t
I
r(Vof f)
S D
Q
Q
d(on)
I
Q
RRM
Q
t
t
S D
t
t
c
rr
r
gs
gd
f
g
rr
( )
( )
on
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Parameter
Parameter
Parameter
V
R
(see test circuit, figure 3)
V
R
(see test circuit, figure 5)
V
V
R
(see test circuit, figure 5)
I
I
V
(see test circuit, figure 5)
SD
SD
DD
DD
DD
DD
DD
G
G
G
= 50
= 50
= 50
= 3 A
= 3 A
= 150 V
= 240 V
= 240 V
= 240 V
= 200 V
Test Conditions
Test Conditions
Test Conditions
V
V
GS
GS
I
V
I
V
I
I
D
D
D
di/dt = 100 A/ s
D
T
= 0
GS
GS
= 5 V
j
= 1.5 A
= 3 A
= 3 A
= 3 A
= 150
= 5 V
= 5 V
Thermal Impedance
o
V
C
GS
= 5 V
Min.
Min.
Min.
Typ.
Typ.
Typ.
150
115
100
300
1.5
70
16
50
40
10
5
7
Max.
Max.
Max.
100
210
140
1.5
22
70
60
12
STD3N30L
3
A/ s
Unit
Unit
Unit
nC
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
C
3/10