m36l0t8060b1 STMicroelectronics, m36l0t8060b1 Datasheet - Page 12

• Manufacturer Part Number: m36l0t8060b1
• Description: 256 Mbit 16 Mb , Multiple Bank, Multilevel, Burst Flash Memory And 64 Mbit Psram, 1.8 V Core, 3 V I/o Supply, Multichip Package
• Manufacturer: STMicroelectronics

Signal descriptions
2.20
2.21
Note:
12/22
Flash V
V
functions are selected by the voltage range applied to the pin.
If V
case a voltage lower than V
while if V
datasheet for the relevant values). V
erase; a change in its value after the operation has started does not have any effect and
program or erase operations continue.
If V
stable until the program/erase algorithm is completed.
V
V
(core and I/O buffers) and PSRAM chips. It must be connected to the system ground.
Each Flash memory device in a system should have their supply voltage (V
program supply voltage V
(high-frequency, inherently-low inductance capacitors should be as close as possible to the
package). See
sufficient to carry the required V
PPF
SS
SS
PPF
PPF
is the common ground reference for all voltage measurements in the Flash memory
is both a Flash memory control input and a Flash memory power supply pin. The two
ground
is kept in a low voltage range (0 V to V
is in the range of V
PPF
PPF
is within the V
Figure 5: AC measurement load
program supply voltage
PPF
PPH
PP1
PPLK
decoupled with a 0.1 µF ceramic capacitor close to the pin
it acts as a power supply pin. In this condition V
ran
PPF
provides absolute protection against program or erase,
ge
PPF
program and erase currents.
these functions are enabled (see the M30L0T8000x2
is only sampled at the beginning of a program or
DDQF
circuit. The PCB track widths should be
) V
PPF
M36L0T8060T1, M36L0T8060B1
is seen as a control input. In this
DDF
PPF
) and the
must be