lrs1329 Sharp Microelectronics of the Americas, lrs1329 Datasheet - Page 12
![no-image](/images/no-image-200.jpg)
lrs1329
Manufacturer Part Number
lrs1329
Description
Stacked Chip Flash Sram
Manufacturer
Sharp Microelectronics of the Americas
Datasheet
1.LRS1329.pdf
(27 pages)
- Current page: 12 of 27
- Download datasheet (2Mb)
SHARP
DC Characteristics
Notes)
4. CMOS inputs
6. F-3
7. F-m
1. Reference
2. Includes
3. Automatic
5. Block erases
in the range between V,, (max) and V,, (min),
F-@ is V&O.ZV
at 2.7V V, in static
connection
is V&O.2V
F-RY/BY.
values
Power Savings (APS) for Flash Memory reduces
are either
(Continue)
and word/byte
to a V, supply
or CNDztO. 2V.
at V,=3.OV
in word mode and is CWO.2V
operation.
V, fO.2V
writes
and T,=+25”C.
LRS1329
is allowed
or GNMO.2V.
are inhibited
and above V,, (max).
for a maximum cumulative
-25’c
TTL inputs
in byte mode.
when F-V,, SV,,,
to
typical
+ss”c
are either
I,,, to 3mA
, V,=
and not guaranteed
period
Vi, or Vi,.
2.7 V to 3.6v)
of 80 hours.
10
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