lrs1329 Sharp Microelectronics of the Americas, lrs1329 Datasheet - Page 8
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lrs1329
Manufacturer Part Number
lrs1329
Description
Stacked Chip Flash Sram
Manufacturer
Sharp Microelectronics of the Americas
Datasheet
1.LRS1329.pdf
(27 pages)
SHARP
S R. 0 = RESERVED FOR FUTURE ENBANCEMENTS
SR.
S R. 2 = WORD/BYTE WRITE SUSPENDED STATUS
S R . l= DEVICE PROTECT STATUS ( D P S )
SR.
SR.5=ERASESTATUS(
S R. 4= WORD/BYTE WRITE STATUS ( WBWS
S R. 7= WRITE STATE MACHINE STATUS ( W SMS)
6. Status
WSMS
0 =Word/ByteWrite
1 = F-‘WP or F-@’ Lock Detected,
0 = Unlock
0 = Block Erase in Progress/Completed
0 = Successful
0 = Successful
1 = F-V,, Low Detect,
0 = F-V,, OK
1 =Word/ByteWrite
1 = Ready
0 = Busy
1 = Block Erase Suspended
1 = Error
1 = Error
7
3= V,, STATUS ( VPPS
6= ERASE SUSPEND STATUS( ESS)
Operation
Register
ESS
in Block
in Word/Byte
6
Abort
Definition
Block
Word/Byte
ES
Erasure
Suspended
in Progress/Completed
Erase
Operation
ES
Write
)
5
(WBWSS)
Write
)
4,R
Abort
WBWS
LRS1329
4
>
)
whi 1 e SR. 7=“0”.
was entered.
masked out when polling
NOTES :
Check RYm
word/byte
erase attempt,
SR.3 does not provide
of F-V,, level.
Erase or Word/ByteWrite
on 1 y when F-V, +Vepm,2.
The WSM interrogates
after
sequences.
on the attempted
not VIM, F-E
SR.0 is reserved
If both SR. 5 and SR.4 are “1”s
indicates
is not guaranteed
VPPS
3
Block
write
the F-V,, level
It informs
WBWSS
or SR.7 to determine
Erase orWord/ByteWrite
is not Vm+
an improper
The WSM interrogates
2
completion.
operation,
for
to reports
the F-s
future
a continuous
the system,
command sequences.
the status
only after
DPS
command sequence
1
SR.6-0
use and should
if the F-w
accurate
and F-E
after
block
depending
are invalid
register.
indication
Block
command
and
a block
feedback
R
0
erase OI
only
is
SR.:
be
6