lrs1329 Sharp Microelectronics of the Americas, lrs1329 Datasheet - Page 24
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lrs1329
Manufacturer Part Number
lrs1329
Description
Stacked Chip Flash Sram
Manufacturer
Sharp Microelectronics of the Americas
Datasheet
1.LRS1329.pdf
(27 pages)
SHARP
15. Notes
Power UP Sequence
Device Decoupling
Supply Power
Power Supply and Chip Enable of Flash Memory and SRAM
Flash Memory is in standby mode when the other is active.
supplies
of control
Both F-V, and S-V, are needed to be applied
same time except SWAM data retention
interference
and a
simulataneously.
.If
Maximum difference
When turping
2.7V, keep F-a
This product
The power supply is needed to be designed carefully
S-E1 should not be LOW and S-Q
the two memories are active
is necessary between SWAM and Flash Memory. Note peak current
2M (x8)
signals (F-E, S-CE,, S-C&).
noises or data collision
on Flash memory power supply,
is a stacked
bit SWAM are assembled into.
LOW for more than 100nsec.
(between F-V ,x and S-V,)
CSp package that a
together,
LRS1329
should not be BIGH when F-Eis
mode.
on W bus.
possibly
by the recommended supply voltage
keep F-B LOW. After F-V,, reaches over
of the voltage
16M(x8/x16)
they may not operate normally
because one of the SRAM and the
A careful
is less than 0.3V.
bit Flash Memory
decoupling
LOW
caused by transition
at the
of power
by
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