lrs1329 Sharp Microelectronics of the Americas, lrs1329 Datasheet - Page 7
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lrs1329
Manufacturer Part Number
lrs1329
Description
Stacked Chip Flash Sram
Manufacturer
Sharp Microelectronics of the Americas
Datasheet
1.LRS1329.pdf
(27 pages)
I
Note)
Write
Block
Write
Block Erase and Word/Byte
Word/Byte Write
Word/Byte
5 Command Definitions
*5.
*4. See the Following
*l.
*2. BUS operations
*3.
SHARP
Block Erase
Operation
Resume
Suspend
Erase and Word/Byte
See the following
Commands other
WA=Address of memory location
SRD=Data read from status
WD=Data to be written
F-%?or
XA=Any valid
BA=Address within
II&Data
IA=Identifier
implementations
or
Write
F-5
read from identifier
>V,,
address
F-V,,
(whichever
Code Address.
V
are defined
than those shown above are reserved
IL
and should
for Flash Memory (*I)
Write
Identifier
the block
F-i@
within
V
“t
v
V IH
at location
X
IH
Protection
goes high first).
2
1
1
register(See
not be used.
in 3. Truth
being erased.
the device.
Codes.
codes.
F?@
to be written.
V
V IH
Write
X
X
X
*5
*5
*5
IL
WA. Data is latched
LRS1329
Alternatives.
All Blocks
All Blocks
All Blocks
All Blocks
2 Boot Blocks
Wr i t,e
Protection
Write
Write
Table.
the next page”Status
’
Locked.
Locked.
Unlocked.
Unlocks.
Alternatives
XA
WA
XA
Locked.
by SHARP for
on the rising
4OH or
10H
Boll
DOH
Effect
Register
future
Write
edge of
Definition”).
device
WA
WD
5
I