k4d263238a-gc50 Samsung Semiconductor, Inc., k4d263238a-gc50 Datasheet - Page 16

• Manufacturer Part Number: k4d263238a-gc50
• Description: 1m X 32bit X 4 Banks Double Data Rate Synchronous Ram With Bi-directional Data Strobe And Dll
• Manufacturer: Samsung Semiconductor, Inc.

AC CHARACTERISTICS (II)
K4D26323RA-GC
AC CHARACTERISTICS (I)
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
K4D26323RA-GC2A
K4D26323RA-GC33
K4D26323RA-GC36
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge
@Normal Precharge
Last data in to Row precharge
@Auto Precharge
Last data in to Read command
Col. address to Col. address
Mode register set cycle time
Auto precharge write recovery
+ Precharge
Exit self refresh to read com-
Power down exit time
Refresh interval time
350MHz ( 2.86ns )
300MHz ( 3.3ns )
275MHz ( 3.6ns )
300MHz ( 3.3ns )
275MHz ( 3.6ns )
275MHz ( 3.6ns )
Frequency
Frequency
Frequency
Parameter
Cas Latency
Cas Latency
Cas Latency
4
4
4
4
4
4
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RC
RFC
RAS
RCDRD
RCDWR
RP
RRD
WR
WR_A
CDLR
CCD
MRD
DAL
XSR
PDEX
REF
Sym-
bol
tRC
tRC
tRC
1tCK+tIS
15
13
16
13
16
16
Min
200
7.8
15
17
10
5
3
5
4
3
3
2
1
2
8
* VDD / VDDQ=2.8V *
-2A
tRFC
tRFC
tRFC
17
15
15
18
18
18
100K
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
tRAS
tRAS
tRAS
10
11
11
11
9
9
- 16 -
1tCK+tIS
Min
200
7.8
tRCDRD tRCDWR
tRCDRD tRCDWR
tRCDRD tRCDWR
13
15
9
4
2
4
3
2
3
2
1
2
7
5
4
5
4
5
5
-33
100K
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
2
2
3
3
3
1tCK+tIS
tRP
tRP
tRP
5
4
5
4
5
5
Min
200
7.8
16
18
128M DDR SDRAM
11
5
3
5
3
3
3
2
1
2
8
-36
tRRD
tRRD
tRRD
Rev. 2.0 (Jan. 2003)
4
3
3
3
3
3
100K
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
(Unit : Number of Clock)
tDAL
tDAL
tDAL
8
7
7
8
8
8
Unit Note
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
us
Unit
Unit
Unit
tCK
tCK
tCK
tCK
tCK
tCK
1
1
1