mt18hts25672chy-667 Micron Semiconductor Products, mt18hts25672chy-667 Datasheet - Page 2

• Manufacturer Part Number: mt18hts25672chy-667
• Description: 2gb, 4gb X72, Dr 200-pin Ddr2 Sdram Socdimm
• Manufacturer: Micron Semiconductor Products

Table 2:
Table 3:
Table 4:
PDF: 09005aef8253e3ea/Source: 09005aef8253e404
HTS18C256_512x72CH.fm - Rev. B 6/07 EN
Parameter
Part Number
Part Number
Refresh count
Row address
Device bank address
Device page size per bank
Device configuration
Column address
Module rank address
MT18HTS25672CHY-667__
MT18HTS25672CHY-53E__
MT18HTS51272CHY-667__
MT18HTS51272CHY-53E__
Addressing
Part Numbers and Timing Parameters – 2GB Modules
Base device: MT47H256M8THN,
Part Numbers and Timing Parameters – 4GB Modules
Base device: MT47H512M8THM,
2
2
Notes:
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown), designating component and PCB
Module
Density
Module
Density
revisions. Consult factory for current revision codes. Example: MT18HTS51272CHY-53EA1.
2GB
2GB
4GB
4GB
1
Configuration
Configuration
1
2Gb TwinDie DDR2 SDRAM
256 Meg x 72
256 Meg x 72
512 Meg x 72
512 Meg x 72
4Gb TwinDie DDR2 SDRAM
2GB, 4GB (x72, DR) 200-Pin DDR2 SDRAM SOCDIMM
2Gb TwinDie™ (256 Meg x 8)
2
16K (A0–A13)
8 (BA0–BA2)
1K (A0–A9)
2 (S0#, S1#)
Bandwidth
Bandwidth
Module
Module
5.3 GB/s
4.3 GB/s
5.3 GB/s
4.3 GB/s
2GB
1KB
8K
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Memory Clock/
Memory Clock/
3.75ns/533 MT/s
3.75ns/533 MT/s
3.0ns/667 MT/s
3.0ns/667 MT/s
Data Rate
Data Rate
4Gb TwinDie (512 Meg x 8)
©2006 Micron Technology, Inc. All rights reserved.
32K (A0–A14)
8 (BA0–BA2)
2 (S0#, S1#)
1K (A0–A9)
4GB
1KB
8K
(CL-
(CL-
Clock Cycles
Clock Cycles
t
t
5-5-5
4-4-4
5-5-5
4-4-4
RCD-
RCD-
Features
t
t
RP)
RP)