mt18vddt12872ag-40b Micron Semiconductor Products, mt18vddt12872ag-40b Datasheet

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mt18vddt12872ag-40b

Manufacturer Part Number
mt18vddt12872ag-40b
Description
256mb, 512mb, 1gb, 2gb X72, Ecc, Dr 184-pin Ddr Sdram Udimm
Manufacturer
Micron Semiconductor Products
Datasheet
Features
• 184-pin, unbuffered dual in-line memory module
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 256MB (32 Meg x 72), 512MB (64 Meg x 72),
• Supports ECC error detection and correction
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Dual rank
• Selectable burst lengths (BL) 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes:
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Gold edge contacts
DDR SDRAM UDIMM
MT18VDDT3272A – 256MB
MT18VDDT6472A – 512MB
MT18VDDT12872A – 1GB
MT18VDDT25672A – 2GB
For component data sheets, refer to Micron’s Web site:
PDF: 09005aef80814e61/Source: 09005aef807f8acb
DD18C32_64_128_256x72A.fm - Rev. C 10/07 EN
Table 1:
(UDIMM)
1GB (128 Meg x 72), and 2GB (256 Meg x 72)
(-40B: V
2n-prefetch architecture
received with data—that is, source-synchronous
data capture
operation
256MB = 15.625µs and 512MB, 1GB,
and 2GB = 7.8125µs maximum average periodic
refresh interval
compatibility
DD
DDSPD
Speed
Grade
-26A
-40B
-335
-262
-265
= V
DD
DD
= +2.3V to +3.6V
Q = +2.5V
= V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
DD
Nomenclature
Q = +2.6V)
Industry
PC3200
PC2700
PC2100
PC2100
PC2100
256MB, 512MB, 1GB, 2GB (x72, ECC, DR) 184-Pin DDR SDRAM UDIMM
1
CL = 3
1
2
400
Data Rate (MT/s)
www.micron.com
CL = 2.5
333
333
266
266
266
1
Figure 1:
Notes: 1. End of life.
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
PCB height: 31.75mm (1.25in)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 184-pin DIMM (standard)
– 184-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3.0
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2.0
– 7.5ns (133 MHz), 266 MT/s, CL = 2.0
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CL = 2
2. Not recommended for new designs.
3. Contact Micron for industrial temperature
266
266
266
266
200
module offerings.
184-Pin UDIMM (MO-206 R/C B)
t
(ns)
RCD
15
15
15
20
20
A
A
3
≤ +85°C)
≤ +70°C)
©2004 Micron Technology, Inc. All rights reserved.
(ns)
t
15
15
15
20
20
RP
2
2
2
Marking
Features
None
-40B
-26A
-335
-262
-265
(ns)
t
G
55
60
60
65
65
Y
RC
I

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mt18vddt12872ag-40b Summary of contents

Page 1

... MT18VDDT12872A – 1GB MT18VDDT25672A – 2GB For component data sheets, refer to Micron’s Web site: Features • 184-pin, unbuffered dual in-line memory module (UDIMM) • Fast data transfer rates: PC2100, PC2700, or PC3200 • 256MB (32 Meg x 72), 512MB (64 Meg x 72), 1GB (128 Meg x 72), and 2GB (256 Meg x 72) • ...

Page 2

... Table 2: Addressing Parameter Refresh count Row address Device bank address Device configuration 128Mb (16 Meg x 8) Column address Module rank address Table 3: Part Numbers and Timing Parameters – 256MB Modules Base device: MT46V16M8, Module 2 Part Number Density MT18VDDT3272AG-40B__ 256MB 256MB MT18VDDT3272AG-335__ MT18VDDT3272AY-335__ ...

Page 3

... Table 5: Part Numbers and Timing Parameters – 1GB Modules Base device: MT46V64M8, Module 2 Part Number Density MT18VDDT12872AG-40B__ MT18VDDT12872AY-40B__ MT18VDDT12872AG-335__ MT18VDDT12872AY-335__ MT18VDDT12872AG-262__ MT18VDDT12872AG-265__ MT18VDDT12872AY-265__ Table 6: Part Numbers and Timing Parameters – 2GB Modules Base device: MT46V128M8, Module 2 Part Number Density MT18VDDT25672AY-335__ Notes: 1. Data sheets for the base devices can be found on Micron’ ...

Page 4

Pin Assignments and Descriptions Table 7: Pin Assignments 184-Pin DDR UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ17 47 REF 2 DQ0 25 DQS2 DQ1 ...

Page 5

... Data strobe: Output with read data, input with write data. DQS is edge- aligned with read data, center-aligned with write data. Used to capture data. I/O Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and data into and out of the presence-detect portion of the module. Supply Power supply: +2.5V ±0.2V (-40B: +2.6V ±0.1V). Supply Serial EEPROM positive power supply: +2 ...

Page 6

Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# DQS0 DM0 DM CS# DQS DQ0 DQ DQ1 DQ DQ2 DQ DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1 DM1 DM CS# DQS DQ8 DQ DQ DQ9 ...

Page 7

... DDR SDRAM modules incorporate serial presence-detect (SPD). The SPD function is implemented using a 2,048-bit EEPROM. This nonvolatile storage device contains 256 bytes. The first 128 bytes are programmed by Micron to identify the module type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...

Page 8

... Electrical Specifications Stresses greater than those listed in Table 9 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the device data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 9

... with auto precharge; and control inputs change only during active READ or WRITE commands Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks are Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80814e61/Source: 09005aef807f8acb DD18C32_64_128_256x72A ...

Page 10

... (MIN); Address and control inputs change only during active READ or WRITE commands Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks are Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80814e61/Source: 09005aef807f8acb DD18C32_64_128_256x72A.fm - Rev. C 10/07 EN ...

Page 11

... (MIN); Address and control inputs change only during active READ or WRITE commands Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks are Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80814e61/Source: 09005aef807f8acb DD18C32_64_128_256x72A.fm - Rev. C 10/07 EN ...

Page 12

... with auto precharge inputs change only during active READ or WRITE commands Notes: 1. Value calculated as one module rank in this operating condition; all other module ranks are Value calculated reflects all module ranks in this operating condition. PDF: 09005aef80814e61/Source: 09005aef807f8acb DD18C32_64_128_256x72A.fm - Rev. C 10/07 EN ...

Page 13

Serial Presence-Detect Table 15: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 14

... TYP 1.02 (0.04) TYP 120.65 (4.75) TYP Back view U12 U13 U14 U15 U16 64.77 (2.55) 73.41 (2.89) ® their respective owners. characterization sometimes occur. 14 Module Dimensions U8 U9 31.9 (1.256) 31.6 (1.244) 17.78 (0.70) TYP Pin 92 U17 U18 10.0 (0.394) 3.8 (0.15) Pin 93 TYP TYP TYP Micron Technology, Inc., reserves the right to change products or specifications without notice. ...

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