mt18vddt12872 Micron Semiconductor Products, mt18vddt12872 Datasheet - Page 21
mt18vddt12872
Manufacturer Part Number
mt18vddt12872
Description
256mb, 512mb, 1gb, 2gb X72, Ecc, Sr 184-pin Ddr Sdram Rdimm
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT18VDDT12872.pdf
(39 pages)
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Table 16: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12–15, 29; notes appear on pages 22–25; 0°C
pdf: 09005aef808a331f, source: 09005aef80858037
DD18C32_64_128_256x72G.fm - Rev. E 9/04 EN
AC CHARACTERISTICS
PARAMETER
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (Continued)
DD
256MB
512MB, 1GB,
2GB
256MB
512MB, 1GB,
2GB
256MB,
512MB
1GB
256MB, 512MB, 1GB, 2GB (x72, ECC, SR)
T
A
21
SYMBOL
+70°C; V
t
t
t
t
t
t
XSNR
XSRD
t
REFC
WTR
REFI
VTD
NA
WR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM RDIMM
DD
127.5
MIN
200
= V
15
75
t
1
0
QH -
-26A/-265
DD
Q = +2.5V ±0.2V
t
DQSQ
MAX
140.6
70.3
15.6
7.8
127.5
MIN
t
200
15
QH -
75
1
0
©2004 Micron Technology, Inc. All rights reserved.
-202
t
DQSQ
MAX
140.6
70.3
15.6
7.8
UNITS
t
t
ns
CK
ns
µs
µs
µs
µs
ns
ns
ns
CK
NOTES
22
21
21
21
21
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