mt9htf12872pky Micron Semiconductor Products, mt9htf12872pky Datasheet - Page 14

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mt9htf12872pky

Manufacturer Part Number
mt9htf12872pky
Description
Ddr2 Sdram Mini-rdimm
Manufacturer
Micron Semiconductor Products
Datasheet
Table 10: I
Values are for the MT47H128M8 DDR2 SDRAM components only, and are computed from values specified in the 1Gb (128
Meg x 8) component data sheet
PDF: 09005aef817ab1fc
htf9c64_128x72pky.pdf - Rev. E 3/10 EN
Parameter/Condition
Operating bank interleave read current; All device banks inter-
leaving reads, I
t
t
bus inputs are stable during deselects; Data bus inputs are switching;
See I
CK (I
RCD
DD7
DD
DD
);
); CKE is HIGH, S# is HIGH between valid commands; Address
Conditions for detail
t
CK =
DD
OUT
t
Specifications and Conditions – 1GB (Continued)
CK (I
= 0mA; BL = 4, CL = CL (I
DD
),
t
RC =
t
RC (I
DD
),
t
RRD =
DD
), AL =
t
RRD (I
512MB, 1GB (x72, SR) 244-Pin DDR2 Mini-RDIMM
t
RCD (I
DD
),
t
RCD =
DD
14
) - 1 ×
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
-80E
-800
3015
-667
2520
© 2005 Micron Technology, Inc. All rights reserved.
I
DD
-53E
2430
Specifications
-40E
2340
Units
mA

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