mt9htf12872pkz Micron Semiconductor Products, mt9htf12872pkz Datasheet - Page 8

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mt9htf12872pkz

Manufacturer Part Number
mt9htf12872pkz
Description
Ddr2 Sdram Mini-rdimm
Manufacturer
Micron Semiconductor Products
Datasheet
Electrical Specifications
Table 7: Absolute Maximum Ratings
PDF: 09005aef83f993e9
htf9c64_128x72pkz.pdf – Rev. A 04/10 EN
V
V
Symbol
DD
IN
I
VREF
T
, V
I
T
/V
OZ
I
C
I
A
1
DDQ
OUT
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
ODT are disabled
V
Module ambient operating temperature
DDR2 SDRAM component case operating tempera-
ture
DD
REF
REF
/V
2
input 0V ≤ V
leakage current; V
DDQ
Notes:
supply voltage relative to V
Stresses greater than those listed may cause permanent damage to the DRAM devices
on the module. This is a stress rating only, and functional operation of the module at
these or any other conditions above those indicated in each device’s data sheet is not
implied. Exposure to absolute maximum rating conditions for extended periods may
adversely affect reliability.
1. Refresh rate is required to double when 85°C < T
2. For further information, refer to technical note TN-00-08: “Thermal Applications,” avail-
IN
512MB, 1GB (x72, ECC, SR) 244-Pin DDR2 SDRAM Mini-RDIMM
≤ 0.95V (All other pins not under
able on Micron’s Web site.
REF
= valid V
OUT
SS
REF
≤ V
SS
level
DDQ
IN
; DQs and
≤ V
DD
8
;
Command/address
RAS#, CAS#, WE#, S#,
CKE, ODT, BA
CK, CK#
DM
DQ, DQS, DQS#
Commercial
Industrial
Commercial
Industrial
Micron Technology, Inc. reserves the right to change products or specifications without notice.
C
≤ 95°C.
Electrical Specifications
–250
© 2010 Micron Technology, Inc. All rights reserved.
Min
–0.5
–0.5
–18
–40
–40
–5
–5
–5
0
0
Max
250
2.3
2.3
18
70
85
85
95
5
5
5
Units
µA
µA
µA
°C
°C
°C
°C
V
V

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