mt9htf12872az Micron Semiconductor Products, mt9htf12872az Datasheet
mt9htf12872az
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mt9htf12872az Summary of contents
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... DDR2 SDRAM UDIMM MT9HTF12872AZ – 1GB For component data sheets, refer to Micron’s Web site: Features • 240-pin, unbuffered dual in-line memory module (UDIMM) • Fast data transfer rates: PC2-6400, PC2-5300, PC2-4200, or PC2-3200 • 1GB (128 Meg x 72) • +1.8V DD DDQ • ...
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... MT9HTF12872AZY-80E__ MT9HTF12872AZY-800__ MT9HTF12872AZY-667__ Notes: 1. All part numbers end with a two-place code (not shown) designating component and PCB revisions. Consult factory for current revision codes. Example: MT9HTF12872AZ-80EG1. 2. Data sheets for the base devices can be found at www.micron.com. PDF: 09005aef83b961d6/Source: 09005aef83b96204 HTF9C128x72AZ.fm - Rev. A 7/09 EN ...
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Pin Assignments and Descriptions Table 4: Pin Assignments 240-Pin DDR2 UDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ19 61 REF ...
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... SPD EEPROM power supply: +1.7V to +3.6V. DDSPD V Supply Reference voltage: V REF V Supply Ground – No connect: These pins are not connected on the module. PDF: 09005aef83b961d6/Source: 09005aef83b96204 HTF9C128x72AZ.fm - Rev. A 7/09 EN 1GB (x72, SR, ECC) 240-Pin DDR2 SDRAM UDIMM 2 C bus Pin Assignments and Descriptions Description 2 C bus ...
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Functional Block Diagram Figure 2: Functional Block Diagram S0# DQS0 DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1# DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2# DQS2 DM2 DQ16 DQ17 DQ18 DQ19 ...
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... General Description The MT9HTF12872AZ DDR2 SDRAM modules are high-speed, CMOS dynamic random access 1GB memory modules organized in a x72 configuration. These modules use 1Gb DDR2 SDRAM devices with eight internal banks. DDR2 SDRAM modules use double data rate architecture to achieve high-speed opera- tion ...
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... Electrical Specifications Stresses greater than those listed in Table 6 may cause permanent damage to the DRAM devices on the module. This is a stress rating only, and functional operation of the mod- ule at these or any other conditions outside those indicated in each device’s data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...
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... Micron encourages designers to simulate the signal characteristics of the system’s mem- ory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. ...
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I Specifications DD Table 8: DDR2 I Specifications and Conditions – 1GB DD Values shown for MT47H32M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter/Condition Operating one bank ...
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Serial Presence-Detect Table 9: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...
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... Pin 1 2.21 (0.087) TYP 1.0 (0.039) TYP 1.0 (0.039) TYP 70.66 (2.782) No components this side of module 3.04 (0.1197) TYP Pin 240 55.0 (2.165) TYP Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted. 2. The dimensional diagram is for reference only. Refer to the JEDEC MO document for com- plete design dimensions ...