m393t5160qza Samsung Semiconductor, Inc., m393t5160qza Datasheet - Page 20

• Manufacturer Part Number: m393t5160qza
• Description: 240pin Registered Module Based On 1gb Q-die 72-bit Ecc
• Manufacturer: Samsung Semiconductor, Inc.

RDIMM
13.0 Electrical Characteristics & AC Timing for DDR2-800/667/533/400
(0 °C < T
12.0 Input/Output Capacitance
* DM is internally loaded to match DQ and DQS identically.
13.1 Refresh Parameters by Device Density
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Input capacitance, CK and CK
Input capacitance, CKE and CS
Input capacitance, Address,
RAS,CAS,WE
Input/output capacitance,
DQ, DM, DQS, DQS
Refresh to active/Refresh command time
Average periodic refresh interval
Bin
(CL - tRCD - tRP)
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
tCK, CL=6
Speed
Part-Number
OPER
tRCD
tRAS
Parameter
tRP
tRC
< 95 °C; V
Parameter
DDQ
3.75
12.5
12.5
57.5
DDR2-800(E7)
min
2.5
45
5
-
= 1.8V + 0.1V; V
5-5-5
Sym.
CCK
CIO
CI1
CI2
70000
max
8
8
8
-
-
-
-
M393T2863QZA
M393T2863QZ3
Min
tREFI
-
-
-
-
3.75
DDR2-800(F7)
min
2.5
15
15
60
45
DD
3
-
6 - 6 - 6
= 1.8V + 0.1V)
Max
12
12
10
11
70000
85 °C < T
0 °C ≤ T
max
Symbol
8
8
8
-
-
-
-
tRFC
M393T5663QZA
M393T5663QZ3
Min
-
-
-
-
CASE
CASE
20 of 29
3.75
DDR2-667(E6)
min
15
15
60
45
5
3
-
≤ 85°C
≤ 95°C
5 - 5 - 5
Max
12
12
10
11
70000
max
8
8
8
-
-
-
-
M393T5660QZA
M393T5660QZ3
Min
-
-
-
-
256Mb
7.8
3.9
75
DDR2-533(D5)
3.75
3.75
min
15
15
60
45
5
-
Max
12
12
10
11
4 - 4 - 4
512Mb
105
7.8
3.9
70000
M393T5160QZA
M393T5160QZ3
max
Min
8
8
8
-
-
-
-
-
-
-
-
127.5
1Gb
7.8
3.9
DDR2-400(CC)
Max
min
12
12
10
15
15
55
40
(V
11
5
5
-
-
DD
3 - 3 - 3
DDR2 SDRAM
=1.8V, V
Rev. 1.1 July 2008
2Gb
195
M393T1G60QJA
7.8
3.9
Min
70000
max
-
-
-
-
8
8
-
-
-
-
-
DDQ
327.5
4Gb
7.8
3.9
=1.8V, T
Max
11
12
12
10
Units
ns
ns
ns
ns
ns
ns
ns
ns
A
Units
=25
Units
µs
µs
ns
pF
°C
)